Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation

Minami, Ouki; Ito, Ryota; Hosoo, Kohei; Ochi, Makoto; Sano, Yasuhisa; Kawai, Kentaro; Yamamura, Kazuya; Arima, Kenta

doi:https://doi.org/10.1063/1.5092336

Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation

Minami, Ouki; Ito, Ryota; Hosoo, Kohei et al.

Journal of Applied Physics, 2019, 126(6), 065301-1-065301-10

Number of Access:778（2025-10-08 11:18 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/83922

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Title	Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation
Creator	CreatorName Minami, Ouki
	CreatorName Ito, Ryota
	CreatorName Hosoo, Kohei
	NRID 1000000145393 1000000145393 CreatorName Ochi, Makoto
	NRID 1000040252598 1000040252598 ORCID 0000-0002-1767-922X 0000-0002-1767-922X researchmap permalink read0042804 read0042804 Scopus Author ID 7402344818 7402344818 CreatorName Sano, Yasuhisa
	NRID 1000090514464 1000090514464 CreatorName Kawai, Kentaro
	NRID 1000060240074 1000060240074 researchmap permalink read0014013 read0014013 Scopus Author ID 7201754767 7201754767 CreatorName Yamamura, Kazuya
	NRID 1000010324807 1000010324807 ORCID 0000-0003-2030-8291 0000-0003-2030-8291 researchmap permalink read0054777 read0054777 Scopus Author ID 57197794262 57197794262 CreatorName Arima, Kenta
Description	Minami O., Ito R., Hosoo K., et al. Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation. Journal of Applied Physics, 126, 6, 065301. https://doi.org/10.1063/1.5092336.
Abstract	A Si-face 4H-SiC surface was modified by plasma oxidation followed by HF etching. The resulting surface was covered with a carbon overlayer composed of C-C bonded clusters and Si-O-C bonding from Si4C4O4 and Si4C4-xO2 (x < 2), as evidenced by photoemission spectroscopy measurements and wetting properties. A trend was observed in which the thickness of the carbon overlayer was proportional to the SiO2 thickness after plasma oxidation, indicating that the former could be controlled on the subnanometer scale by adjusting plasma conditions. After a subsequent annealing under ultrahigh vacuum, we found that graphene grew on the modified SiC surface without the formation of a pitting morphology, which is in contrast to the case using an untreated SiC substrate. Raman spectroscopy revealed that the former graphene includes fewer defects than the latter graphene. We discuss the microscopic mechanism by which reaction products composed of C-C and Si-O-C bonds form in the SiO2 film near the SiO2/SiC interface via plasma oxidation as well as their influence on the subsequent growth of graphene.
Publisher	American Institute of Physics
Source Title	Journal of Applied Physics
Volume (Issue)	126(6)
Page	065301-1-065301-10
Date of Issued	2019-08-08
Language	English
Handle URL	https://hdl.handle.net/11094/83922
PISSN	00218979
eISSN	10897550
NCID	AA11868165
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.5092336
Access Rights	open access
CopyRight	Copyright 2019 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics, 126(6), 065301, 2019 and may be found at https://doi.org/10.1063/1.5092336.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Journal of Applied Physics. 2019, 126(6), p. 065301-1-065301-10
DC.title	Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation
DC.creator	Minami, Ouki
	Ito, Ryota
	Hosoo, Kohei
	Ochi, Makoto
	Sano, Yasuhisa
	Kawai, Kentaro
	Yamamura, Kazuya
	Arima, Kenta
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2019-08-08
DC.identifier	https://doi.org/10.1063/1.5092336
DC.description	Minami O., Ito R., Hosoo K., et al. Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation. Journal of Applied Physics, 126, 6, 065301. https://doi.org/10.1063/1.5092336.
DCTERMS.abstract	A Si-face 4H-SiC surface was modified by plasma oxidation followed by HF etching. The resulting surface was covered with a carbon overlayer composed of C-C bonded clusters and Si-O-C bonding from Si4C4O4 and Si4C4-xO2 (x < 2), as evidenced by photoemission spectroscopy measurements and wetting properties. A trend was observed in which the thickness of the carbon overlayer was proportional to the SiO2 thickness after plasma oxidation, indicating that the former could be controlled on the subnanometer scale by adjusting plasma conditions. After a subsequent annealing under ultrahigh vacuum, we found that graphene grew on the modified SiC surface without the formation of a pitting morphology, which is in contrast to the case using an untreated SiC substrate. Raman spectroscopy revealed that the former graphene includes fewer defects than the latter graphene. We discuss the microscopic mechanism by which reaction products composed of C-C and Si-O-C bonds form in the SiO2 film near the SiO2/SiC interface via plasma oxidation as well as their influence on the subsequent growth of graphene.
DC.rights	Copyright 2019 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics, 126(6), 065301, 2019 and may be found at https://doi.org/10.1063/1.5092336.
DC.format	83922
citation_title	Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation
citation_author	Minami, Ouki
	Ito, Ryota
	Hosoo, Kohei
	Ochi, Makoto
	Sano, Yasuhisa
	Kawai, Kentaro
	Yamamura, Kazuya
	Arima, Kenta
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2019-08-08
citation_journal_title	Journal of Applied Physics
citation_volume	126
citation_issue	6
citation_firstpage	065301-1
citation_lastpage	065301-10
citation_doi	https://doi.org/10.1063/1.5092336
citation_public_url	https://hdl.handle.net/11094/83922

Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation

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