Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

Mori, Daichi; Oka, Hiroshi; Hosoi, Takuji; Kawai, Kentaro; Morita, Mizuho; Crumlin, Ethan J.; Liu, Zhi; Watanabe, Heiji; Arima, Kenta

doi:https://doi.org/10.1063/1.4962202

Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

Mori, Daichi; Oka, Hiroshi; Hosoi, Takuji et al.

Journal of Applied Physics, 2016, 120(9), 095306-1-095306-10

Number of Access:1,336（2025-08-14 00:41 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/83923

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Title	Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy
Creator	CreatorName Mori, Daichi
	CreatorName Oka, Hiroshi
	NRID 1000090452466 1000090452466 CreatorName Hosoi, Takuji
	NRID 1000090514464 1000090514464 CreatorName Kawai, Kentaro
	NRID 1000050157905 1000050157905 CreatorName Morita, Mizuho
	CreatorName Crumlin, Ethan J.
	CreatorName Liu, Zhi
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
	NRID 1000010324807 1000010324807 ORCID 0000-0003-2030-8291 0000-0003-2030-8291 researchmap permalink read0054777 read0054777 Scopus Author ID 57197794262 57197794262 CreatorName Arima, Kenta
Description	Mori D., Oka H., Hosoi T., et al. Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy. Journal of Applied Physics, 120, 9, 095306. https://doi.org/10.1063/1.4962202.
Abstract	The energy difference between the oxide and bulk peaks in X-ray photoelectron spectroscopy (XPS) spectra was investigated for both GeO2/Ge and SiO2/Si structures with thickness-controlled water films. This was achieved by obtaining XPS spectra at various values of relative humidity (RH) of up to ∼15%. The increase in the energy shift is more significant for thermal GeO2 on Ge than for thermal SiO2 on Si above ∼10-4% RH, which is due to the larger amount of water molecules that infiltrate into the GeO2 film to form hydroxyls. Analyzing the origins of this energy shift, we propose that the positive charging of a partially hydroxylated GeO2 film, which is unrelated to X-ray irradiation, causes the larger energy shift for GeO2/Ge than for SiO2/Si. A possible microscopic mechanism of this intrinsic positive charging is the emission of electrons from adsorbed water species in the suboxide layer of the GeO2 film to the Ge bulk, leaving immobile cations or positively charged states in the oxide. This may be related to the reported negative shift of flat band voltages in metal-oxide-semiconductor diodes with an air-exposed GeO2 layer.
Publisher	American Institute of Physics
Source Title	Journal of Applied Physics
Volume (Issue)	120(9)
Page	095306-1-095306-10
Date of Issued	2016-09-02
Language	English
Handle URL	https://hdl.handle.net/11094/83923
PISSN	00218979
eISSN	10897550
NCID	AA11868165
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.4962202
Access Rights	open access
CopyRight	Copyright 2016 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics, 120(9), 095306, 2016 and may be found at https://doi.org/10.1063/1.4962202.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Journal of Applied Physics. 2016, 120(9), p. 095306-1-095306-10
DC.title	Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy
DC.creator	Mori, Daichi
	Oka, Hiroshi
	Hosoi, Takuji
	Kawai, Kentaro
	Morita, Mizuho
	Crumlin, Ethan J.
	Liu, Zhi
	Watanabe, Heiji
	Arima, Kenta
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2016-09-02
DC.identifier	https://doi.org/10.1063/1.4962202
DC.description	Mori D., Oka H., Hosoi T., et al. Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy. Journal of Applied Physics, 120, 9, 095306. https://doi.org/10.1063/1.4962202.
DCTERMS.abstract	The energy difference between the oxide and bulk peaks in X-ray photoelectron spectroscopy (XPS) spectra was investigated for both GeO2/Ge and SiO2/Si structures with thickness-controlled water films. This was achieved by obtaining XPS spectra at various values of relative humidity (RH) of up to ∼15%. The increase in the energy shift is more significant for thermal GeO2 on Ge than for thermal SiO2 on Si above ∼10-4% RH, which is due to the larger amount of water molecules that infiltrate into the GeO2 film to form hydroxyls. Analyzing the origins of this energy shift, we propose that the positive charging of a partially hydroxylated GeO2 film, which is unrelated to X-ray irradiation, causes the larger energy shift for GeO2/Ge than for SiO2/Si. A possible microscopic mechanism of this intrinsic positive charging is the emission of electrons from adsorbed water species in the suboxide layer of the GeO2 film to the Ge bulk, leaving immobile cations or positively charged states in the oxide. This may be related to the reported negative shift of flat band voltages in metal-oxide-semiconductor diodes with an air-exposed GeO2 layer.
DC.rights	Copyright 2016 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics, 120(9), 095306, 2016 and may be found at https://doi.org/10.1063/1.4962202.
DC.format	83923
citation_title	Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy
citation_author	Mori, Daichi
	Oka, Hiroshi
	Hosoi, Takuji
	Kawai, Kentaro
	Morita, Mizuho
	Crumlin, Ethan J.
	Liu, Zhi
	Watanabe, Heiji
	Arima, Kenta
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2016-09-02
citation_journal_title	Journal of Applied Physics
citation_volume	120
citation_issue	9
citation_firstpage	095306-1
citation_lastpage	095306-10
citation_doi	https://doi.org/10.1063/1.4962202
citation_public_url	https://hdl.handle.net/11094/83923

Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

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