Piezoelectric coefficients of GaN determined by hopping conduction of carriers

Adachi, K.; Ogi, H.; Nagakubo, A.; Nakamura, N.; Hirao, M.; Imade, M.; Yoshimura, M.; Mori, Y.

doi:https://doi.org/10.1063/1.4966995

Piezoelectric coefficients of GaN determined by hopping conduction of carriers

Adachi, K.; Ogi, H.; Nagakubo, A. et al.

Applied Physics Letters, 2016, 109(18), 182108-1-182108-4

Number of Access:1,122（2025-09-30 08:00 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/83931

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Title	Piezoelectric coefficients of GaN determined by hopping conduction of carriers
Creator	NRID 1000060521739 1000060521739 CreatorName Adachi, K.
	NRID 1000090252626 1000090252626 researchmap permalink read0042771 read0042771 Scopus Author ID 35563683500 35563683500 CreatorName Ogi, H.
	NRID 1000070751113 1000070751113 ORCID 0000-0001-7494-5099 0000-0001-7494-5099 researchmap permalink nagakubo nagakubo Scopus Author ID 55329400300 55329400300 CreatorName Nagakubo, A.
	NRID 1000050452404 1000050452404 researchmap permalink nnakamura nnakamura Scopus Author ID 7403356186 7403356186 ORCID 0000-0002-5338-842X 0000-0002-5338-842X CreatorName Nakamura, N.
	NRID 1000080112027 1000080112027 CreatorName Hirao, M.
	NRID 1000040457007 1000040457007 CreatorName Imade, M.
	NRID 1000060314382 1000060314382 researchmap permalink read0191199 read0191199 Scopus Author ID 7403136552 7403136552 ORCID 0000-0002-0770-1251 0000-0002-0770-1251 CreatorName Yoshimura, M.
	NRID 1000090252618 1000090252618 ORCID 0000-0003-2952-7458 0000-0003-2952-7458 researchmap permalink mori_yusuke mori_yusuke Scopus Author ID 7404197134 7404197134 CreatorName Mori, Y.
Description	Adachi K., Ogi H., Nagakubo A., et al. Piezoelectric coefficients of GaN determined by hopping conduction of carriers. Applied Physics Letters, 109(18), 182108 (2016) https://doi.org/10.1063/1.4966995.
Abstract	Using resonant ultrasound spectroscopy, we monitored the resonance-frequency and internal-friction behaviors of a GaN monocrystal at elevated temperatures. An internal-friction peak appears with increasing temperature, at which reduction of frequency occurs. The frequency shift reflects the disappearance of the apparent piezoelectricity due to hopping conduction of carriers, allowing us to accurately determine the piezoelectric coefficients eij. We measured the frequency decrements of eight vibrational modes to inversely determine three independent eij: Our values are e15=-0.22±0.02 C/m2, e31=-0.14±0.02 C/m2, e33=1.15±0.05 C/m2.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	109(18)
Page	182108-1-182108-4
Date of Issued	2016-11-01
Language	English
Handle URL	https://hdl.handle.net/11094/83931
PISSN	00036951
eISSN	10773118
NCID	AA11868096
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.4966995
Access Rights	open access
CopyRight	Copyright 2016 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 109(18), 182108, 2016 and may be found at https://doi.org/10.1063/1.4966995.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2016, 109(18), p. 182108-1-182108-4
DC.title	Piezoelectric coefficients of GaN determined by hopping conduction of carriers
DC.creator	Adachi, K.
	Ogi, H.
	Nagakubo, A.
	Nakamura, N.
	Hirao, M.
	Imade, M.
	Yoshimura, M.
	Mori, Y.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2016-11-01
DC.identifier	https://doi.org/10.1063/1.4966995
DC.description	Adachi K., Ogi H., Nagakubo A., et al. Piezoelectric coefficients of GaN determined by hopping conduction of carriers. Applied Physics Letters, 109(18), 182108 (2016) https://doi.org/10.1063/1.4966995.
DCTERMS.abstract	Using resonant ultrasound spectroscopy, we monitored the resonance-frequency and internal-friction behaviors of a GaN monocrystal at elevated temperatures. An internal-friction peak appears with increasing temperature, at which reduction of frequency occurs. The frequency shift reflects the disappearance of the apparent piezoelectricity due to hopping conduction of carriers, allowing us to accurately determine the piezoelectric coefficients eij. We measured the frequency decrements of eight vibrational modes to inversely determine three independent eij: Our values are e15=-0.22±0.02 C/m2, e31=-0.14±0.02 C/m2, e33=1.15±0.05 C/m2.
DC.rights	Copyright 2016 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 109(18), 182108, 2016 and may be found at https://doi.org/10.1063/1.4966995.
DC.format	83931
citation_title	Piezoelectric coefficients of GaN determined by hopping conduction of carriers
citation_author	Adachi, K.
	Ogi, H.
	Nagakubo, A.
	Nakamura, N.
	Hirao, M.
	Imade, M.
	Yoshimura, M.
	Mori, Y.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2016-11-01
citation_journal_title	Applied Physics Letters
citation_volume	109
citation_issue	18
citation_firstpage	182108-1
citation_lastpage	182108-4
citation_doi	https://doi.org/10.1063/1.4966995
citation_public_url	https://hdl.handle.net/11094/83931

Piezoelectric coefficients of GaN determined by hopping conduction of carriers

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