Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films

Nagakubo, A.; Tsuboi, S.; Kabe, Y.; Matsuda, S.; Koreeda, A.; Fujii, Y.; Ogi, H.

doi:https://doi.org/10.1063/1.5098354

Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films

Nagakubo, A.; Tsuboi, S.; Kabe, Y. et al.

Applied Physics Letters, 2019, 114(25), 251905-1-251905-5

Number of Access:323（2025-06-17 14:31 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/83932

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Title	Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films
Creator	NRID 1000070751113 1000070751113 ORCID 0000-0001-7494-5099 0000-0001-7494-5099 researchmap permalink nagakubo nagakubo Scopus Author ID 55329400300 55329400300 CreatorName Nagakubo, A.
	CreatorName Tsuboi, S.
	CreatorName Kabe, Y.
	CreatorName Matsuda, S.
	NRID 1000040323878 1000040323878 CreatorName Koreeda, A.
	CreatorName Fujii, Y.
	NRID 1000090252626 1000090252626 researchmap permalink read0042771 read0042771 Scopus Author ID 35563683500 35563683500 CreatorName Ogi, H.
Description	Nagakubo A., Tsuboi S., Kabe Y., et al. Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films. Applied Physics Letters, 114(25), 251905 (2019) https://doi.org/10.1063/1.5098354.
Abstract	Vitreous silicon oxide (v-SiO2) shows anomalous phonon properties such as the positive temperature coefficient of velocity (TCV). Variation of the Si-O-Si bond angle between SiO4 tetrahedrons has been recognized to be the key, but the origin of TCV still remains unclear. In this study, we controlled the bond angle by doping nitrogen and measured TCV of vitreous silicon oxynitride thin films with various nitrogen concentrations using picosecond ultrasonics. TCV significantly decreases by adding a small amount of nitrogen, and it shows positive to negative values as the nitrogen concentration increases. We evaluated the bond-angle change by Fourier-transform infrared spectroscopy, which decreases with the increase in the nitrogen content. We also find that the temperature rise in nondoped v-SiO2 decreases the bond angle, leading to an increase in the sound velocity. We then reveal theoretically that the bond-angle change dominates the origin of the positive TCV. This study indicates the existence of a zero-TCV single material, and we discover that the specific content of v-SiO1.71N0.19 achieves this.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	114(25)
Page	251905-1-251905-5
Date of Issued	2019-06-25
Language	English
Handle URL	https://hdl.handle.net/11094/83932
PISSN	00036951
eISSN	10773118
NCID	AA11868096
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.5098354
Access Rights	open access
CopyRight	Copyright 2019 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 114(25), 251905, 2019 and may be found at https://doi.org/10.1063/1.5098354.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2019, 114(25), p. 251905-1-251905-5
DC.title	Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films
DC.creator	Nagakubo, A.
	Tsuboi, S.
	Kabe, Y.
	Matsuda, S.
	Koreeda, A.
	Fujii, Y.
	Ogi, H.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2019-06-25
DC.identifier	https://doi.org/10.1063/1.5098354
DC.description	Nagakubo A., Tsuboi S., Kabe Y., et al. Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films. Applied Physics Letters, 114(25), 251905 (2019) https://doi.org/10.1063/1.5098354.
DCTERMS.abstract	Vitreous silicon oxide (v-SiO2) shows anomalous phonon properties such as the positive temperature coefficient of velocity (TCV). Variation of the Si-O-Si bond angle between SiO4 tetrahedrons has been recognized to be the key, but the origin of TCV still remains unclear. In this study, we controlled the bond angle by doping nitrogen and measured TCV of vitreous silicon oxynitride thin films with various nitrogen concentrations using picosecond ultrasonics. TCV significantly decreases by adding a small amount of nitrogen, and it shows positive to negative values as the nitrogen concentration increases. We evaluated the bond-angle change by Fourier-transform infrared spectroscopy, which decreases with the increase in the nitrogen content. We also find that the temperature rise in nondoped v-SiO2 decreases the bond angle, leading to an increase in the sound velocity. We then reveal theoretically that the bond-angle change dominates the origin of the positive TCV. This study indicates the existence of a zero-TCV single material, and we discover that the specific content of v-SiO1.71N0.19 achieves this.
DC.rights	Copyright 2019 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 114(25), 251905, 2019 and may be found at https://doi.org/10.1063/1.5098354.
DC.format	83932
citation_title	Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films
citation_author	Nagakubo, A.
	Tsuboi, S.
	Kabe, Y.
	Matsuda, S.
	Koreeda, A.
	Fujii, Y.
	Ogi, H.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2019-06-25
citation_journal_title	Applied Physics Letters
citation_volume	114
citation_issue	25
citation_firstpage	251905-1
citation_lastpage	251905-5
citation_doi	https://doi.org/10.1063/1.5098354
citation_public_url	https://hdl.handle.net/11094/83932

Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films

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