Elastic-constant measurement in oxide and semiconductor thin films by Brillouin oscillations excited by picosecond ultrasound

Ogi, Hirotsugu; Shagawa, Tomohiro; Nakamura, Nobutomo; Hirao, Masahiko; Odaka, Hidefumi; Kihara, Naoto

doi:https://doi.org/10.1143/JJAP.48.07GA01

Elastic-constant measurement in oxide and semiconductor thin films by Brillouin oscillations excited by picosecond ultrasound

Ogi, Hirotsugu; Shagawa, Tomohiro; Nakamura, Nobutomo et al.

Japanese Journal of Applied Physics, 2009, 48, 07GA01

Number of Access:493（2025-11-25 02:18 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/84162

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Title	Elastic-constant measurement in oxide and semiconductor thin films by Brillouin oscillations excited by picosecond ultrasound
Creator	NRID 1000090252626 1000090252626 researchmap permalink read0042771 read0042771 Scopus Author ID 35563683500 35563683500 ORCID 0000-0002-9602-5194 0000-0002-9602-5194 CreatorName Ogi, Hirotsugu
	CreatorName Shagawa, Tomohiro
	NRID 1000050452404 1000050452404 researchmap permalink nnakamura nnakamura Scopus Author ID 7403356186 7403356186 ORCID 0000-0002-5338-842X 0000-0002-5338-842X CreatorName Nakamura, Nobutomo
	NRID 1000080112027 1000080112027 CreatorName Hirao, Masahiko
	CreatorName Odaka, Hidefumi
	CreatorName Kihara, Naoto
Description	Hirotsugu Ogi, Tomohiro Shagawa, Nobutomo Nakamura, Masahiko Hirao, Hidefumi Odaka and Naoto Kihara. Elastic-constant measurement in oxide and semiconductor thin films by Brillouin oscillations excited by picosecond ultrasound. Japanese Journal of Applied Physics, 2009, 48(7S), 07GA01. https://doi.org/10.1143/JJAP.48.07GA01.
Abstract	In this study, an elastic-stiffness evaluation in transparent or translucent thin films using Brillouin oscillations detected by picosecond ultrasound is conducted. An ultrahigh-frequency (≥50 GHz) strain pulse is generated using femtosecond light pulse in specimens and propagates in the film-thickness direction. The time-delayed probe light pulse enters the specimen, which is diffracted by the strain pulse, causing oscillations in the reflectivity change of the probe light pulse. The oscillation frequency gives the elastic modulus with ellipsometry for refractive index. The theoretical calculation predicts the accuracy of stiffness measurement. The methodology is applied to the study of amorphous silica, amorphous tantalum oxide, diamond thin films, and silicon wafers.
Publisher	The Japan Society of Applied Physics
Source Title	Japanese Journal of Applied Physics
Volume (Issue)	48
Page	07GA01
Date of Issued	2009-07-21
Language	English
Handle URL	https://hdl.handle.net/11094/84162
PISSN	00214922
eISSN	13474065
NCID	AA12295836
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1143/JJAP.48.07GA01
Access Rights	open access
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Japanese Journal of Applied Physics. 2009, 48, p. 07GA01
DC.title	Elastic-constant measurement in oxide and semiconductor thin films by Brillouin oscillations excited by picosecond ultrasound
DC.creator	Ogi, Hirotsugu
	Shagawa, Tomohiro
	Nakamura, Nobutomo
	Hirao, Masahiko
	Odaka, Hidefumi
	Kihara, Naoto
DC.publisher	The Japan Society of Applied Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2009-07-21
DC.identifier	https://doi.org/10.1143/JJAP.48.07GA01
DC.description	Hirotsugu Ogi, Tomohiro Shagawa, Nobutomo Nakamura, Masahiko Hirao, Hidefumi Odaka and Naoto Kihara. Elastic-constant measurement in oxide and semiconductor thin films by Brillouin oscillations excited by picosecond ultrasound. Japanese Journal of Applied Physics, 2009, 48(7S), 07GA01. https://doi.org/10.1143/JJAP.48.07GA01.
DCTERMS.abstract	In this study, an elastic-stiffness evaluation in transparent or translucent thin films using Brillouin oscillations detected by picosecond ultrasound is conducted. An ultrahigh-frequency (≥50 GHz) strain pulse is generated using femtosecond light pulse in specimens and propagates in the film-thickness direction. The time-delayed probe light pulse enters the specimen, which is diffracted by the strain pulse, causing oscillations in the reflectivity change of the probe light pulse. The oscillation frequency gives the elastic modulus with ellipsometry for refractive index. The theoretical calculation predicts the accuracy of stiffness measurement. The methodology is applied to the study of amorphous silica, amorphous tantalum oxide, diamond thin films, and silicon wafers.
DC.format	84162
citation_title	Elastic-constant measurement in oxide and semiconductor thin films by Brillouin oscillations excited by picosecond ultrasound
citation_author	Ogi, Hirotsugu
	Shagawa, Tomohiro
	Nakamura, Nobutomo
	Hirao, Masahiko
	Odaka, Hidefumi
	Kihara, Naoto
citation_publisher	The Japan Society of Applied Physics
citation_language	English
citation_date	2009-07-21
citation_journal_title	Japanese Journal of Applied Physics
citation_volume	48
citation_firstpage	07GA01
citation_doi	https://doi.org/10.1143/JJAP.48.07GA01
citation_public_url	https://hdl.handle.net/11094/84162

Elastic-constant measurement in oxide and semiconductor thin films by Brillouin oscillations excited by picosecond ultrasound

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