Identifier to cite or link to this item: https://doi.org/10.18910/85387

Link to primary information 

File	Format	Terms of use	Size	Views	Date.Available	Description	information
32262_Abstract	pdf	None	194 KB	802	2021.12.17
32262_Dissertation	pdf	None	7.32 MB	696	2021.12.17

Item Information

Output File Export EndNote Basic Export Mendeley

Title	Surface reaction mechanisms of plasma-assisted atomic layer etching for advanced semiconductor devices
	先端半導体デバイス用プラズマ支援原子層エッチングの表面反応機構
	センタンハンドウタイデバイスヨウプラズマシエンゲンシソウエッチングノヒョウメンハンノウキコウ
Creator	CreatorName 平田, 瑛子 ; ヒラタ, アキコ
Degree Name	博士（工学）
Date of Granted	2021-09-24
Grantor	Osaka University
Faculty	工学
Specialty	マテリアル生産科学
Grant ID	甲第21782号
Description Number	32262
Language	English
Handle URL	https://hdl.handle.net/11094/85387
DOI	https://doi.org/10.18910/85387
Access Rights	open access
oaire:version	Version of Record
Category	Doctoral Thesis with Full Text / Graduate School of Engineering / 2021
	Doctoral Thesis / Graduate School of Engineering / 2021

Back to Home