Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers

Shimura, Takayoshi; Shimizu, Michihiro; Horiuchi, Shinichiro; Watanabe, Heiji; Yasutake, Kiyoshi; Umeno, Masataka

doi:https://doi.org/10.1063/1.2353812

Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers

Shimura, Takayoshi; Shimizu, Michihiro; Horiuchi, Shinichiro et al.

Applied Physics Letters, 2006, 89(11), 111923

Number of Access:254（2025-05-28 13:55 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/85481

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Title	Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers
Creator	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	CreatorName Shimizu, Michihiro
	CreatorName Horiuchi, Shinichiro
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
	NRID 1000080166503 1000080166503 CreatorName Yasutake, Kiyoshi
	NRID 1000050029071 1000050029071 CreatorName Umeno, Masataka
Description	Takayoshi Shimura, Michihiro Shimizu, Shinichiro Horiuchi, Heiji Watanabe, Kiyoshi Yasutake, Masataka Umeno, "Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers", Appl. Phys. Lett. 89, 111923 (2006) https://doi.org/10.1063/1.2353812.
Abstract	Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers was investigated. For oxidation at 1000°C, oxidation stops completely after a few hours for the Si_{1-x}Gex (x=0.068-0.16) layers. For higher initial Ge concentrations of the SiGe layer, the oxidation saturated in a shorter oxidation time, whereas saturation was not observed for the oxidation at 900 and 1100°C. The authors propose a model for self-limiting oxidation, in which the oxidation saturation is governed by an interfacial Ge-rich layer that depends on the oxidation temperature and the initial Ge concentration.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	89(11)
Page	111923
Date of Issued	2006-09-11
Language	English
Handle URL	https://hdl.handle.net/11094/85481
PISSN	00036951
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.2353812
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.2353812.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2006, 89(11), p. 111923
DC.title	Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers
DC.creator	Shimura, Takayoshi
	Shimizu, Michihiro
	Horiuchi, Shinichiro
	Watanabe, Heiji
	Yasutake, Kiyoshi
	Umeno, Masataka
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2006-09-11
DC.identifier	https://doi.org/10.1063/1.2353812
DC.description	Takayoshi Shimura, Michihiro Shimizu, Shinichiro Horiuchi, Heiji Watanabe, Kiyoshi Yasutake, Masataka Umeno, "Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers", Appl. Phys. Lett. 89, 111923 (2006) https://doi.org/10.1063/1.2353812.
DCTERMS.abstract	Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers was investigated. For oxidation at 1000°C, oxidation stops completely after a few hours for the Si_{1-x}Gex (x=0.068-0.16) layers. For higher initial Ge concentrations of the SiGe layer, the oxidation saturated in a shorter oxidation time, whereas saturation was not observed for the oxidation at 900 and 1100°C. The authors propose a model for self-limiting oxidation, in which the oxidation saturation is governed by an interfacial Ge-rich layer that depends on the oxidation temperature and the initial Ge concentration.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.2353812.
DC.format	85481
citation_title	Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers
citation_author	Shimura, Takayoshi
	Shimizu, Michihiro
	Horiuchi, Shinichiro
	Watanabe, Heiji
	Yasutake, Kiyoshi
	Umeno, Masataka
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2006-09-11
citation_journal_title	Applied Physics Letters
citation_volume	89
citation_issue	11
citation_firstpage	111923
citation_doi	https://doi.org/10.1063/1.2353812
citation_public_url	https://hdl.handle.net/11094/85481

Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers

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