journal article

Journal Article

Text

Applied Physics Letters. 2009, 95(2), p. 022102

Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

American Institute of Physics

English

Text

2009-07-13

https://doi.org/10.1063/1.3171938

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura and Heiji Watanabe, "Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)", Appl. Phys. Lett. 95, 022102 (2009) https://doi.org/10.1063/1.3171938.

Germanium oxynitride (GeON) gate dielectrics with surface nitrogen-rich layers were fabricated by plasma nitridation of thermally grown oxides (GeO_2) on Ge(100). Insulating features of ultrathin GeO_2 layers of around 2-nm-thick were found to improve with plasma treatment, in which leakage current was drastically reduced to over four orders of magnitude. Consequently, Au/GeON/Ge capacitors of an equivalent oxide thickness down to 1.7 nm were achieved while keeping sufficient leakage reduction merit. The minimum interface state density values of GeON/Ge structures as low as 3×10^{11} cm^{-2} eV^{-1} were obtained for both the lower and upper halves of the bandgap without any postnitridation treatments. These results were discussed based on the effects of plasma nitridation on a degraded GeO_2 surface for recovering its electrical properties by creating stable nitride layers.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.3171938.

85484

Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

American Institute of Physics

English

2009-07-13

Applied Physics Letters

95

2

022102

https://doi.org/10.1063/1.3171938

https://hdl.handle.net/11094/85484