Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

doi:https://doi.org/10.1063/1.2799260

Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji et al.

Applied Physics Letters, 2007, 91(16), 163501

Number of Access:868（2025-08-18 23:05 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/85487

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Title	Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation
Creator	CreatorName Kutsuki, Katsuhiro
	CreatorName Okamoto, Gaku
	NRID 1000090452466 1000090452466 CreatorName Hosoi, Takuji
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
Description	Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura and Heiji Watanabe, "Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation", Appl. Phys. Lett. 91, 163501 (2007) https://doi.org/10.1063/1.2799260.
Abstract	We have investigated the stability of amorphous germanium nitride (Ge_3N_4) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge_3 N_4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO_2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO_2 islands on the surfaces. These findings indicate that although Ge_3N_4 layers have superior thermal stability compared to the GeO_2 layers, Ge_3N_4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge_3N_4 insulator or passivation layers.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	91(16)
Page	163501
Date of Issued	2007-10-15
Language	English
Handle URL	https://hdl.handle.net/11094/85487
PISSN	00036951
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.2799260
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.2799260.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2007, 91(16), p. 163501
DC.title	Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation
DC.creator	Kutsuki, Katsuhiro
	Okamoto, Gaku
	Hosoi, Takuji
	Shimura, Takayoshi
	Watanabe, Heiji
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2007-10-15
DC.identifier	https://doi.org/10.1063/1.2799260
DC.description	Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura and Heiji Watanabe, "Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation", Appl. Phys. Lett. 91, 163501 (2007) https://doi.org/10.1063/1.2799260.
DCTERMS.abstract	We have investigated the stability of amorphous germanium nitride (Ge_3N_4) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge_3 N_4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO_2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO_2 islands on the surfaces. These findings indicate that although Ge_3N_4 layers have superior thermal stability compared to the GeO_2 layers, Ge_3N_4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge_3N_4 insulator or passivation layers.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.2799260.
DC.format	85487
citation_title	Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation
citation_author	Kutsuki, Katsuhiro
	Okamoto, Gaku
	Hosoi, Takuji
	Shimura, Takayoshi
	Watanabe, Heiji
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2007-10-15
citation_journal_title	Applied Physics Letters
citation_volume	91
citation_issue	16
citation_firstpage	163501
citation_doi	https://doi.org/10.1063/1.2799260
citation_public_url	https://hdl.handle.net/11094/85487

Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

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