Chemical etching of silicon carbide in pure water by using platinum catalyst

Isohashi, Ai; Bui, P. V.; Toh, D.; Matsuyama, S.; Sano, Y.; Inagaki, K.; Morikawa, Y.; Yamauchi, K.

doi:https://doi.org/10.1063/1.4983206

Chemical etching of silicon carbide in pure water by using platinum catalyst

Isohashi, Ai; Bui, P. V.; Toh, D. et al.

Applied Physics Letters, 2017, 110(20), 201601

Number of Access:1,009（2025-08-15 06:46 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/86927

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Title	Chemical etching of silicon carbide in pure water by using platinum catalyst
Creator	CreatorName Isohashi, Ai
	CreatorName Bui, P. V.
	CreatorName Toh, D.
	NRID 1000010423196 1000010423196 CreatorName Matsuyama, S.
	NRID 1000040252598 1000040252598 ORCID 0000-0002-1767-922X 0000-0002-1767-922X researchmap permalink read0042804 read0042804 Scopus Author ID 7402344818 7402344818 CreatorName Sano, Y.
	CreatorName Inagaki, K.
	NRID 1000080358184 1000080358184 researchmap permalink read0118585 read0118585 Scopus Author ID 56042230400 56042230400 CreatorName Morikawa, Y.
	NRID 1000010174575 1000010174575 researchmap permalink yamauchikazuto yamauchikazuto Scopus Author ID 7801509680 7801509680 CreatorName Yamauchi, K.
Description	Ai Isohashi, P. V. Bui, D. Toh, S. Matsuyama, Y. Sano, K. Inagaki, Y. Morikawa, and K. Yamauchi, "Chemical etching of silicon carbide in pure water by using platinum catalyst", Appl. Phys. Lett. 110, 201601 (2017) https://doi.org/10.1063/1.4983206.
Abstract	Chemical etching of SiC was found to proceed in pure water with the assistance of a Pt catalyst. A 4H-SiC (0001) wafer was placed and slid on a polishing pad in pure water, on which a thin Pt film was deposited to give a catalytic nature. Etching of the wafer surface was observed to remove protrusions preferentially by interacting with the Pt film more frequently, thus flattening the surface. In the case of an on-axis wafer, a crystallographically ordered surface was obtained with a straight step-and-terrace structure, the height of which corresponds to that of an atomic bilayer of Si and C. The etching rate depended upon the electrochemical potential of Pt. The vicinal surface was observed at the potential at which the Pt surface was bare. The primary etching mechanism was hydrolysis with the assistance of a Pt catalyst. This method can, therefore, be used as an environmentally friendly and sustainable technology.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	110(20)
Page	201601
Date of Issued	2017-05-15
Language	English
Handle URL	https://hdl.handle.net/11094/86927
PISSN	00036951
eISSN	10773118
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.4983206
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (citation of published article) and may be found at https://doi.org/10.1063/1.4983206.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2017, 110(20), p. 201601
DC.title	Chemical etching of silicon carbide in pure water by using platinum catalyst
DC.creator	Isohashi, Ai
	Bui, P. V.
	Toh, D.
	Matsuyama, S.
	Sano, Y.
	Inagaki, K.
	Morikawa, Y.
	Yamauchi, K.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2017-05-15
DC.identifier	https://doi.org/10.1063/1.4983206
DC.description	Ai Isohashi, P. V. Bui, D. Toh, S. Matsuyama, Y. Sano, K. Inagaki, Y. Morikawa, and K. Yamauchi, "Chemical etching of silicon carbide in pure water by using platinum catalyst", Appl. Phys. Lett. 110, 201601 (2017) https://doi.org/10.1063/1.4983206.
DCTERMS.abstract	Chemical etching of SiC was found to proceed in pure water with the assistance of a Pt catalyst. A 4H-SiC (0001) wafer was placed and slid on a polishing pad in pure water, on which a thin Pt film was deposited to give a catalytic nature. Etching of the wafer surface was observed to remove protrusions preferentially by interacting with the Pt film more frequently, thus flattening the surface. In the case of an on-axis wafer, a crystallographically ordered surface was obtained with a straight step-and-terrace structure, the height of which corresponds to that of an atomic bilayer of Si and C. The etching rate depended upon the electrochemical potential of Pt. The vicinal surface was observed at the potential at which the Pt surface was bare. The primary etching mechanism was hydrolysis with the assistance of a Pt catalyst. This method can, therefore, be used as an environmentally friendly and sustainable technology.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (citation of published article) and may be found at https://doi.org/10.1063/1.4983206.
DC.format	86927
citation_title	Chemical etching of silicon carbide in pure water by using platinum catalyst
citation_author	Isohashi, Ai
	Bui, P. V.
	Toh, D.
	Matsuyama, S.
	Sano, Y.
	Inagaki, K.
	Morikawa, Y.
	Yamauchi, K.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2017-05-15
citation_journal_title	Applied Physics Letters
citation_volume	110
citation_issue	20
citation_firstpage	201601
citation_doi	https://doi.org/10.1063/1.4983206
citation_public_url	https://hdl.handle.net/11094/86927

Chemical etching of silicon carbide in pure water by using platinum catalyst

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