Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations

Bui, P. V.; Isohashi, A.; Kizaki, H.; Sano, Y.; Yamauchi, K.; Morikawa, Y.; Inagaki, K.

doi:https://doi.org/10.1063/1.4935832

Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations

Bui, P. V.; Isohashi, A.; Kizaki, H. et al.

Applied Physics Letters, 2015, 107(20), 201601

Number of Access:825（2025-08-15 06:46 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/86929

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Title	Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations
Creator	CreatorName Bui, P. V.
	CreatorName Isohashi, A.
	CreatorName Kizaki, H.
	NRID 1000040252598 1000040252598 ORCID 0000-0002-1767-922X 0000-0002-1767-922X researchmap permalink read0042804 read0042804 Scopus Author ID 7402344818 7402344818 CreatorName Sano, Y.
	NRID 1000010174575 1000010174575 researchmap permalink yamauchikazuto yamauchikazuto Scopus Author ID 7801509680 7801509680 CreatorName Yamauchi, K.
	NRID 1000080358184 1000080358184 researchmap permalink read0118585 read0118585 Scopus Author ID 56042230400 56042230400 CreatorName Morikawa, Y.
	CreatorName Inagaki, K.
Description	P. V. Bui, A. Isohashi, H. Kizaki, Y. Sano, K. Yamauchi, Y. Morikawa, and K. Inagaki, "Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations", Appl. Phys. Lett. 107, 201601 (2015) https://doi.org/10.1063/1.4935832.
Abstract	Hydrofluoric acid (HF) etching of the SiC surface assisted by Pt as a catalyst is investigated using density functional theory. Etching is initiated by the dissociative adsorption of HF on step-edge Si, forming a five-fold coordinated Si moiety as a metastable state. This is followed by breaking of the Si-C back-bond by a H-transfer process. The gross activation barrier strongly correlates with the stability of the metastable state and is reduced by the formation of Pt-O chemical bonds, leading to an enhancement of the etching reaction.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	107(20)
Page	201601
Date of Issued	2015-11-16
Language	English
Handle URL	https://hdl.handle.net/11094/86929
PISSN	00036951
eISSN	10773118
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.4935832
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (citation of published article) and may be found at https://doi.org/10.1063/1.4935832.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2015, 107(20), p. 201601
DC.title	Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations
DC.creator	Bui, P. V.
	Isohashi, A.
	Kizaki, H.
	Sano, Y.
	Yamauchi, K.
	Morikawa, Y.
	Inagaki, K.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2015-11-16
DC.identifier	https://doi.org/10.1063/1.4935832
DC.description	P. V. Bui, A. Isohashi, H. Kizaki, Y. Sano, K. Yamauchi, Y. Morikawa, and K. Inagaki, "Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations", Appl. Phys. Lett. 107, 201601 (2015) https://doi.org/10.1063/1.4935832.
DCTERMS.abstract	Hydrofluoric acid (HF) etching of the SiC surface assisted by Pt as a catalyst is investigated using density functional theory. Etching is initiated by the dissociative adsorption of HF on step-edge Si, forming a five-fold coordinated Si moiety as a metastable state. This is followed by breaking of the Si-C back-bond by a H-transfer process. The gross activation barrier strongly correlates with the stability of the metastable state and is reduced by the formation of Pt-O chemical bonds, leading to an enhancement of the etching reaction.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (citation of published article) and may be found at https://doi.org/10.1063/1.4935832.
DC.format	86929
citation_title	Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations
citation_author	Bui, P. V.
	Isohashi, A.
	Kizaki, H.
	Sano, Y.
	Yamauchi, K.
	Morikawa, Y.
	Inagaki, K.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2015-11-16
citation_journal_title	Applied Physics Letters
citation_volume	107
citation_issue	20
citation_firstpage	201601
citation_doi	https://doi.org/10.1063/1.4935832
citation_public_url	https://hdl.handle.net/11094/86929

Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations

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