Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage

Sano, Yasuhisa; Doi, Toshiro K.; Kurokawa, Syuhei; Aida, Hideo; Ohnishi, Osamu; Uneda, Michio; Shiozawa, Kousuke; Okada, Yu; Yamauchi, Kazuto

doi:https://doi.org/10.18494/SAM.2014.979

Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage

Sano, Yasuhisa; Doi, Toshiro K.; Kurokawa, Syuhei et al.

Sensors and Materials, 2014, 26(4), 429-434

Number of Access:967（2025-08-14 12:35 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/86951

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Title	Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage
Creator	NRID 1000040252598 1000040252598 ORCID 0000-0002-1767-922X 0000-0002-1767-922X researchmap permalink read0042804 read0042804 Scopus Author ID 7402344818 7402344818 CreatorName Sano, Yasuhisa
	NRID 1000030207675 1000030207675 CreatorName Doi, Toshiro K.
	NRID 1000090243899 1000090243899 CreatorName Kurokawa, Syuhei
	NRID 1000010811648 1000010811648 CreatorName Aida, Hideo
	NRID 1000050315107 1000050315107 CreatorName Ohnishi, Osamu
	NRID 1000000298324 1000000298324 CreatorName Uneda, Michio
	CreatorName Shiozawa, Kousuke
	CreatorName Okada, Yu
	NRID 1000010174575 1000010174575 researchmap permalink yamauchikazuto yamauchikazuto Scopus Author ID 7801509680 7801509680 CreatorName Yamauchi, Kazuto
Subject	hard-to-machine material
	atmospheric-pressure plasma
	PCVM
	damaged layer
	GaN
Description	Yasuhisa Sano, Toshiro K. Doi, Syuhei Kurokawa, Hideo Aida, Osamu Ohnishi, Michio Uneda, Kousuke Shiozawa, Yu Okada and Kazuto Yamauchi, Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage, Sens. Mater., Vol. 26, No. 6, 2014, p. 429-434.
Abstract	A high-efficiency planarization method combining atmospheric-pressure plasma etching [plasma chemical vaporization machining (PCVM)] and mechanical polishing is proposed. The convex part of a substrate surface, considered to be affected by mechanical action, is removed preferentially by PCVM. However, it is not evident whether the PCVM removal rate of the damaged layer of a gallium nitride (GaN) substrate increases. In this study, the dependence of removal rate on removal depth is investigated using a GaN substrate with a damaged layer. As a result, the removal rate of the damaged layer is observed to be three or four times greater than that of deep undamaged layers.
Publisher	MYU K.K.
Source Title	Sensors and Materials
Volume (Issue)	26(4)
Page	429-434
Date of Issued	2014-06-29
Language	English
Handle URL	https://hdl.handle.net/11094/86951
PISSN	09144935
eISSN	24350869
NCID	AA10790969
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.18494/SAM.2014.979
Access Rights	open access
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Sensors and Materials. 2014, 26(4), p. 429-434
DC.title	Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage
DC.creator	Sano, Yasuhisa
	Doi, Toshiro K.
	Kurokawa, Syuhei
	Aida, Hideo
	Ohnishi, Osamu
	Uneda, Michio
	Shiozawa, Kousuke
	Okada, Yu
	Yamauchi, Kazuto
DC.publisher	MYU K.K.
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2014-06-29
DC.identifier	https://doi.org/10.18494/SAM.2014.979
DC.subject	hard-to-machine material
	atmospheric-pressure plasma
	PCVM
	damaged layer
	GaN
DC.description	Yasuhisa Sano, Toshiro K. Doi, Syuhei Kurokawa, Hideo Aida, Osamu Ohnishi, Michio Uneda, Kousuke Shiozawa, Yu Okada and Kazuto Yamauchi, Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage, Sens. Mater., Vol. 26, No. 6, 2014, p. 429-434.
DCTERMS.abstract	A high-efficiency planarization method combining atmospheric-pressure plasma etching [plasma chemical vaporization machining (PCVM)] and mechanical polishing is proposed. The convex part of a substrate surface, considered to be affected by mechanical action, is removed preferentially by PCVM. However, it is not evident whether the PCVM removal rate of the damaged layer of a gallium nitride (GaN) substrate increases. In this study, the dependence of removal rate on removal depth is investigated using a GaN substrate with a damaged layer. As a result, the removal rate of the damaged layer is observed to be three or four times greater than that of deep undamaged layers.
DC.format	86951
citation_title	Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage
citation_author	Sano, Yasuhisa
	Doi, Toshiro K.
	Kurokawa, Syuhei
	Aida, Hideo
	Ohnishi, Osamu
	Uneda, Michio
	Shiozawa, Kousuke
	Okada, Yu
	Yamauchi, Kazuto
citation_publisher	MYU K.K.
citation_language	English
citation_date	2014-06-29
citation_journal_title	Sensors and Materials
citation_volume	26
citation_issue	4
citation_firstpage	429
citation_lastpage	434
citation_doi	https://doi.org/10.18494/SAM.2014.979
citation_public_url	https://hdl.handle.net/11094/86951

Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage

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