High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

Sano, Yasuhisa; Shiozawa, Kousuke; Doi, Toshiro et al.

Mechanical Engineering Journal, 2016, 3(1), 15-00527

Number of Access:672（2025-10-08 09:43 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/86952

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Title
High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates
Creator
NRID
1000040252598 1000040252598
ORCID
0000-0002-1767-922X 0000-0002-1767-922X
researchmap permalink
read0042804 read0042804
Scopus Author ID
7402344818 7402344818
CreatorName
Sano, Yasuhisa
CreatorName
Shiozawa, Kousuke
NRID
1000030207675 1000030207675
CreatorName
Doi, Toshiro
NRID
1000090243899 1000090243899
CreatorName
Kurokawa, Syuhei
NRID
1000010811648 1000010811648
CreatorName
Aida, Hideo
CreatorName
Miyashita, Tadakazu
NRID
1000010174575 1000010174575
researchmap permalink
yamauchikazuto yamauchikazuto
Scopus Author ID
7801509680 7801509680
CreatorName
Yamauchi, Kazuto
Subject
Hard-to-machine materials
Atmospheric-pressure plasma
Plasma etching
Mechanical polishing
Damaged layer
Planarization
Silicon carbide
Description
Yasuhisa SANO, Kousuke SHIOZAWA, Toshiro DOI, Syuhei KUROKAWA, Hideo AIDA, Tadakazu MIYASHITA, Kazuto YAMAUCHI, High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates, Mechanical Engineering Journal, 2016, 3(1), 15-00527, https://doi.org/10.1299/mej.15-00527.
Abstract
A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond. We proposed a novel planarization method that combines chemical mechanical polishing (CMP) and atmospheric-pressure plasma etching (plasma chemical vaporization machining [P-CVM]) and developed a prototype of the basic type CMP/P-CVM combined processing system. This prototype has a mechanical polishing part for introducing a damaged layer on the convex part of the sample surface and a P-CVM part for efficient etching of the damaged layer. Process conditions for plasma generation were determined in order to minimize the optical emission intensity ratio of nitrogen to helium because nitrogen comes from circumstance air and should not exist in the plasma region. Process conditions for mechanical polishing were determined in order to efficiently generate a damaged layer only on the convex part of the sample surface. The combined process was performed using a SiC substrate on which the mesa structure was fabricated as a sample. As a result, we found that the convex parts of the mesa structure were preferentially removed and the surface of the sample was planarized. We also found that the decreasing rate of the peak-to-valley value of the mesa structure obtained by CMP/P-CVM combined processing was approximately seven times greater than that during mechanical polishing.
Publisher
The Japan Society of Mechanical Engineers
Source Title
Mechanical Engineering Journal
Volume (Issue)
3(1)
Page
15-00527
Date of Issued
2016-02
Language
English
Handle URL
https://hdl.handle.net/11094/86952
eISSN
21879745
Relation.isVersionOf
DOI (Publisher Version)
https://doi.org/10.1299/mej.15-00527
Access Rights
open access
CopyRight
© 2016 The Japan Society of Mechanical Engineers
oaire:version
Accepted Manuscript
Category
学術雑誌論文 Journal Article