Characteristics and mechanism of catalyst-referred etching method: Application to 4H-SiC

Van Bui, Pho; Sano, Yasuhisa; Morikawa, Yoshitada et al.

International Journal of Automation Technology, 2018, 12(2), 154-159

Number of Access:740（2025-10-08 11:26 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/86958

Link to primary information 

File Format Terms of use Size Views Date.Available Description information
153579_1 pdf None 2.58 MB 456 2022.03.28  
Creative Commons : Attribution - NoDerivatives

Item Information

Output File Export EndNote Basic Export Mendeley

Title
Characteristics and mechanism of catalyst-referred etching method: Application to 4H-SiC
Creator
CreatorName
Van Bui, Pho
NRID
1000040252598 1000040252598
ORCID
0000-0002-1767-922X 0000-0002-1767-922X
researchmap permalink
read0042804 read0042804
Scopus Author ID
7402344818 7402344818
CreatorName
Sano, Yasuhisa
NRID
1000080358184 1000080358184
researchmap permalink
read0118585 read0118585
Scopus Author ID
56042230400 56042230400
CreatorName
Morikawa, Yoshitada
NRID
1000010174575 1000010174575
researchmap permalink
yamauchikazuto yamauchikazuto
Scopus Author ID
7801509680 7801509680
CreatorName
Yamauchi, Kazuto
Subject
catalyst-referred etching
chemical planarization
SiC
interface reaction
first-principles calculations
Description
Pho Van Bui, Yasuhisa Sano, Yoshitada Morikawa, and Kazuto Yamauchi, “Characteristics and Mechanism of Catalyst-Referred Etching Method: Application to 4H-SiC,” Int. J. Automation Technol., Vol.12, No.2, pp. 154-159, 2018.
Abstract
A novel abrasive-free planarization method named catalyst-referred etching (CARE) was developed. A polishing pad is coated with a catalytic material to promote chemical etching of the work substrate. During processing, the topmost areas of the work substrate, which are in contact with the catalyst surface, are selectively etched off. Atomically highly ordered surfaces are obtained for many types of work substrates. In this paper, the removal characteristics and mechanism of CARE for single crystalline 4H-SiC are reviewed.
Publisher
Fuji Technology Press
Source Title
International Journal of Automation Technology
Volume (Issue)
12(2)
Page
154-159
Date of Issued
2018-03-05
Language
English
Handle URL
https://hdl.handle.net/11094/86958
PISSN
18817629
eISSN
18838022
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.20965/ijat.2018.p0154
Access Rights
open access
CopyRight
This article is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article