Photoelectrochemical oxidation assisted catalyst-referred etching for sic (0001) surface

Toh, Daisetsu; Bui, Pho Van; Yamauchi, Kazuto et al.

International Journal of Automation Technology, 2021, 15(1), 74-79

Number of Access:792（2025-08-13 22:44 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/86959

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Title
Photoelectrochemical oxidation assisted catalyst-referred etching for sic (0001) surface
Creator
NRID
1000070910678 1000070910678
researchmap permalink
D-Toh D-Toh
Scopus Author ID
57190948930 57190948930
CreatorName
Toh, Daisetsu
CreatorName
Bui, Pho Van
NRID
1000010174575 1000010174575
researchmap permalink
yamauchikazuto yamauchikazuto
Scopus Author ID
7801509680 7801509680
CreatorName
Yamauchi, Kazuto
NRID
1000040252598 1000040252598
ORCID
0000-0002-1767-922X 0000-0002-1767-922X
researchmap permalink
read0042804 read0042804
Scopus Author ID
7402344818 7402344818
CreatorName
Sano, Yasuhisa
Subject
catalyst-referred etching
silicon carbide (SiC)
photoelectrochemical oxidation (PEC)
ultraviolet light
Description
Daisetsu Toh, Pho Van Bui, Kazuto Yamauchi, and Yasuhisa Sano, “Photoelectrochemical Oxidation Assisted Catalyst-Referred Etching for SiC (0001) Surface,” Int. J. Automation Technol., Vol.15, No.1, pp. 74-79, 2021.
Abstract
In a previous study, we developed an abrasive-free polishing method named catalyst-referred etching (CARE) and used it for the planarization of silicon carbide (SiC) (0001). In this method, Si atoms at step edges are preferentially removed through a catalytically assisted hydrolysis reaction to obtain an atomically smooth and crystallographically well-ordered surface. However, the removal rate is low (<nm/h) and needs to be improved. In this study, we proposed an ultraviolet (UV) light assisted CARE method. In this method, UV light is irradiated onto a SiC surface to generate holes and oxidize the surface. The oxidized area, consisting of SiO2, can be quickly removed to form a nano-pit owing to the higher removal rate of SiO2 compared to that of SiC. The periphery of the nano-pits works as a reaction site, leading to a higher removal rate. To enhance the oxidation rate and form nano-pits, we applied electrochemical bias to the SiC substrate. However, the removal rate did not improve significantly when the bias voltage was higher than 3.0 V. This is because the electrochemical potential of Pt increased with the anodic potential of SiC, which oxidized the Pt surface and degraded the catalyst capability. To avoid this issue, we modified the catalytic pad, where an in-situ refreshment of the Pt surface is possible. As a result, the removal rate increased up to 200 nm/h at a bias of 7.0 V, which is 100 times higher than that of the CARE without UV irradiation. The proposed method is expected to contribute to the enhancement in the productivity and quality of nextgeneration SiC substrates.
Publisher
Fuji Technology Press
Source Title
International Journal of Automation Technology
Volume (Issue)
15(1)
Page
74-79
Date of Issued
2021-01-05
Language
English
Handle URL
https://hdl.handle.net/11094/86959
PISSN
18817629
eISSN
18838022
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.20965/ijat.2021.p0074
Access Rights
open access
CopyRight
This article is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article