Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst

Arima, Kenta; Hara, Hideyuki; Murata, Junji; Ishida, Takeshi; Okamoto, Ryota; Yagi, Keita; Sano, Yasuhisa; Mimura, Hidekazu; Yamauchi, Kazuto

doi:https://doi.org/10.1063/1.2739084

Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst

Arima, Kenta; Hara, Hideyuki; Murata, Junji et al.

Applied Physics Letters, 2007, 90(20), 202106

Number of Access:989（2025-10-08 09:28 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/86973

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Title	Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst
Creator	NRID 1000010324807 1000010324807 ORCID 0000-0003-2030-8291 0000-0003-2030-8291 researchmap permalink read0054777 read0054777 Scopus Author ID 57197794262 57197794262 CreatorName Arima, Kenta
	CreatorName Hara, Hideyuki
	CreatorName Murata, Junji
	CreatorName Ishida, Takeshi
	CreatorName Okamoto, Ryota
	CreatorName Yagi, Keita
	NRID 1000040252598 1000040252598 ORCID 0000-0002-1767-922X 0000-0002-1767-922X researchmap permalink read0042804 read0042804 Scopus Author ID 7402344818 7402344818 CreatorName Sano, Yasuhisa
	NRID 1000030362651 1000030362651 CreatorName Mimura, Hidekazu
	NRID 1000010174575 1000010174575 researchmap permalink yamauchikazuto yamauchikazuto Scopus Author ID 7801509680 7801509680 CreatorName Yamauchi, Kazuto
Description	Kenta Arima, Hideyuki Hara, et al. "Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst", Appl. Phys. Lett. 90(20), 202106 (2007) https://doi.org/10.1063/1.2739084.
Abstract	The authors present a method for flattening SiC surfaces with Pt as a catalyst in HF solution. The mechanism for flattening SiC surfaces is discussed. The flattened 4H-SiC (0001) surface is composed of alternating wide and narrow terraces with single-bilayer-height steps, which are induced by the rate difference of the catalytic reactions between adjacent terraces. Scanning tunneling microscopy images reveal a 1×1 phase on the terraces. The 1×1 phase is composed of coexisting of F- and OH-terminated Si atoms, which originate from the polarization of the underlying Si-C bonds. © 2007 American Institute of Physics.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	90(20)
Page	202106
Date of Issued	2007-05-16
Language	English
Handle URL	https://hdl.handle.net/11094/86973
PISSN	00036951
eISSN	10773118
NCID	AA00543431
NCID	AA11868096
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.2739084
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 90(20), 202106 (2007) and may be found at https://doi.org/10.1063/1.2739084.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2007, 90(20), p. 202106
DC.title	Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst
DC.creator	Arima, Kenta
	Hara, Hideyuki
	Murata, Junji
	Ishida, Takeshi
	Okamoto, Ryota
	Yagi, Keita
	Sano, Yasuhisa
	Mimura, Hidekazu
	Yamauchi, Kazuto
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2007-05-16
DC.identifier	https://doi.org/10.1063/1.2739084
DC.description	Kenta Arima, Hideyuki Hara, et al. "Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst", Appl. Phys. Lett. 90(20), 202106 (2007) https://doi.org/10.1063/1.2739084.
DCTERMS.abstract	The authors present a method for flattening SiC surfaces with Pt as a catalyst in HF solution. The mechanism for flattening SiC surfaces is discussed. The flattened 4H-SiC (0001) surface is composed of alternating wide and narrow terraces with single-bilayer-height steps, which are induced by the rate difference of the catalytic reactions between adjacent terraces. Scanning tunneling microscopy images reveal a 1×1 phase on the terraces. The 1×1 phase is composed of coexisting of F- and OH-terminated Si atoms, which originate from the polarization of the underlying Si-C bonds. © 2007 American Institute of Physics.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 90(20), 202106 (2007) and may be found at https://doi.org/10.1063/1.2739084.
DC.format	86973
citation_title	Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst
citation_author	Arima, Kenta
	Hara, Hideyuki
	Murata, Junji
	Ishida, Takeshi
	Okamoto, Ryota
	Yagi, Keita
	Sano, Yasuhisa
	Mimura, Hidekazu
	Yamauchi, Kazuto
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2007-05-16
citation_journal_title	Applied Physics Letters
citation_volume	90
citation_issue	20
citation_firstpage	202106
citation_doi	https://doi.org/10.1063/1.2739084
citation_public_url	https://hdl.handle.net/11094/86973

Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst

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