Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces

Umeda, T.; Nakano, Y.; Higa, E.; Okuda, T.; Kimoto, T.; Hosoi, T.; Watanabe, H.; Sometani, M.; Harada, S.

doi:https://doi.org/10.1063/1.5134648

Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces

Umeda, T.; Nakano, Y.; Higa, E. et al.

Journal of Applied Physics, 2020, 127(14), 145301

Number of Access:1,091（2025-08-18 23:03 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/88193

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Title	Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces
Creator	CreatorName Umeda, T.
	CreatorName Nakano, Y.
	CreatorName Higa, E.
	CreatorName Okuda, T.
	CreatorName Kimoto, T.
	CreatorName Hosoi, T.
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, H.
	CreatorName Sometani, M.
	CreatorName Harada, S.
Description	Umeda T., Nakano Y., Higa E., et al. Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces. Journal of Applied Physics, 127, 14, 145301. https://doi.org/10.1063/1.5134648.
Abstract	We characterized an intrinsic interface defect, called the "PbC center," formed at 4H-SiC(0001)/SiO2 interfaces by means of electron-spin-resonance (ESR) and electrically detected-magnetic-resonance (EDMR) spectroscopies. The formation of the PbC center was observed with a spin density of 3-4 × 1012 cm-2 after standard thermal oxidation. This center could be effectively removed by the NO post-oxidation-anneal (POA) process or ultra-high-temperature oxidation and could be passivated by H atoms via the H2 POA process. There was a clear correlation between the PbC center and field-effect mobility (μFE) of 4H-SiC(0001) metal-oxide-semiconductor field effect transistors (MOSFETs). The PbC center decreased μFE because this center acts as electron traps, reducing the free-carrier density in the inversion channel of 4H-SiC(0001) MOSFET. We also examined the counter doping effect of NO POA by introducing 15N impurities; however, the counter doping of 15N donors was not detectable by ESR (much lower than 2 × 1011cm-2). Highly sensitive EDMR measurements revealed that the PbC center has two isotropic hyperfine (HF) interactions at 1.3 and 6.8 mT and suggested that its main 13C HF interaction should be larger than 14 mT. Based on the present experimental data, the origin of the PbC center was ascribed as a carbon-related interface defect that forms a C-H bond after hydrogen passivation. This feature is similar to that of the porous-PbC centers (carbon dangling-bond centers) found in porous-SiC/SiO2 systems. However, their HF signatures indicated that the PbC center at 4H-SiC(0001)/SiO2 interfaces and the porous-PbC centers in porous-SiC should be different centers associated with different wave functions.
Publisher	American Institute of Physics
Source Title	Journal of Applied Physics
Volume (Issue)	127(14)
Page	145301
Date of Issued	2020-04-09
Language	English
Handle URL	https://hdl.handle.net/11094/88193
PISSN	00218979
eISSN	10897550
NCID	AA11868165
NCID	AA00693547
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.5134648
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Umeda T., Nakano Y., Higa E., et al. Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces. Journal of Applied Physics, 127, 14, 145301 and may be found at https://doi.org/10.1063/1.5134648.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Journal of Applied Physics. 2020, 127(14), p. 145301
DC.title	Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces
DC.creator	Umeda, T.
	Nakano, Y.
	Higa, E.
	Okuda, T.
	Kimoto, T.
	Hosoi, T.
	Watanabe, H.
	Sometani, M.
	Harada, S.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2020-04-09
DC.identifier	https://doi.org/10.1063/1.5134648
DC.description	Umeda T., Nakano Y., Higa E., et al. Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces. Journal of Applied Physics, 127, 14, 145301. https://doi.org/10.1063/1.5134648.
DCTERMS.abstract	We characterized an intrinsic interface defect, called the "PbC center," formed at 4H-SiC(0001)/SiO2 interfaces by means of electron-spin-resonance (ESR) and electrically detected-magnetic-resonance (EDMR) spectroscopies. The formation of the PbC center was observed with a spin density of 3-4 × 1012 cm-2 after standard thermal oxidation. This center could be effectively removed by the NO post-oxidation-anneal (POA) process or ultra-high-temperature oxidation and could be passivated by H atoms via the H2 POA process. There was a clear correlation between the PbC center and field-effect mobility (μFE) of 4H-SiC(0001) metal-oxide-semiconductor field effect transistors (MOSFETs). The PbC center decreased μFE because this center acts as electron traps, reducing the free-carrier density in the inversion channel of 4H-SiC(0001) MOSFET. We also examined the counter doping effect of NO POA by introducing 15N impurities; however, the counter doping of 15N donors was not detectable by ESR (much lower than 2 × 1011cm-2). Highly sensitive EDMR measurements revealed that the PbC center has two isotropic hyperfine (HF) interactions at 1.3 and 6.8 mT and suggested that its main 13C HF interaction should be larger than 14 mT. Based on the present experimental data, the origin of the PbC center was ascribed as a carbon-related interface defect that forms a C-H bond after hydrogen passivation. This feature is similar to that of the porous-PbC centers (carbon dangling-bond centers) found in porous-SiC/SiO2 systems. However, their HF signatures indicated that the PbC center at 4H-SiC(0001)/SiO2 interfaces and the porous-PbC centers in porous-SiC should be different centers associated with different wave functions.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Umeda T., Nakano Y., Higa E., et al. Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces. Journal of Applied Physics, 127, 14, 145301 and may be found at https://doi.org/10.1063/1.5134648.
DC.format	88193
citation_title	Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces
citation_author	Umeda, T.
	Nakano, Y.
	Higa, E.
	Okuda, T.
	Kimoto, T.
	Hosoi, T.
	Watanabe, H.
	Sometani, M.
	Harada, S.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2020-04-09
citation_journal_title	Journal of Applied Physics
citation_volume	127
citation_issue	14
citation_firstpage	145301
citation_doi	https://doi.org/10.1063/1.5134648
citation_public_url	https://hdl.handle.net/11094/88193

Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces

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