Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

Sato, K.; Yasuda, H.; Ichikawa, S.; Imamura, M.; Takahashi, K.; Hata, S.; Matsumura, S.; Anada, S.; Lee, J. G.; Mori, H.

doi:https://doi.org/10.1016/j.actamat.2018.05.045

Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

Sato, K.; Yasuda, H.; Ichikawa, S. et al.

Acta Materialia, 2018, 154, 284-294

Number of Access:1,049（2025-08-14 12:35 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89385

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Title	Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation
Creator	NRID 1000070314424 1000070314424 ORCID 0000-0001-9078-2541 0000-0001-9078-2541 researchmap permalink read0158304 read0158304 Scopus Author ID 55552977400 55552977400 CreatorName Sato, K.
	NRID 1000060210259 1000060210259 CreatorName Yasuda, H.
	CreatorName Ichikawa, S.
	CreatorName Imamura, M.
	CreatorName Takahashi, K.
	CreatorName Hata, S.
	CreatorName Matsumura, S.
	CreatorName Anada, S.
	CreatorName Lee, J. G.
	NRID 1000010024366 1000010024366 CreatorName Mori, H.
Subject	Transition-metal silicide
	Synchrotron radiation
	Transmission electron microscopy
	Electronic band structure
	Electronic excitation
Abstract	The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt₂Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.
Publisher	Elsevier Ltd.
Source Title	Acta Materialia
Volume (Issue)	154
Page	284-294
Date of Issued	2018-08-01
Language	English
Handle URL	https://hdl.handle.net/11094/89385
PISSN	13596454
NCID	AA1106787X
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1016/j.actamat.2018.05.045
Access Rights	open access
CopyRight	©2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Acta Materialia. 2018, 154, p. 284-294
DC.title	Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation
DC.creator	Sato, K.
	Yasuda, H.
	Ichikawa, S.
	Imamura, M.
	Takahashi, K.
	Hata, S.
	Matsumura, S.
	Anada, S.
	Lee, J. G.
	Mori, H.
DC.publisher	Elsevier Ltd.
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2018-08-01
DC.identifier	https://doi.org/10.1016/j.actamat.2018.05.045
DC.subject	Transition-metal silicide
	Synchrotron radiation
	Transmission electron microscopy
	Electronic band structure
	Electronic excitation
DCTERMS.abstract	The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt₂Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.
DC.rights	©2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.
DC.format	89385
citation_title	Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation
citation_author	Sato, K.
	Yasuda, H.
	Ichikawa, S.
	Imamura, M.
	Takahashi, K.
	Hata, S.
	Matsumura, S.
	Anada, S.
	Lee, J. G.
	Mori, H.
citation_publisher	Elsevier Ltd.
citation_language	English
citation_date	2018-08-01
citation_journal_title	Acta Materialia
citation_volume	154
citation_firstpage	284
citation_lastpage	294
citation_doi	https://doi.org/10.1016/j.actamat.2018.05.045
citation_public_url	https://hdl.handle.net/11094/89385

Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

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