Stacking Faults and Intercalants in (Ta₁₋ₓTiₓ)Se₂ Revealed by Cross-Sectional Transmission Electron Microscopy

Sato, Kazuhisa; Matsushita, Toshiya

Journal of Physical Chemistry C, 2022, 126(33), 14290-14296

Number of Access:365（2025-08-14 04:05 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89386

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Title
Stacking Faults and Intercalants in (Ta₁₋ₓTiₓ)Se₂ Revealed by Cross-Sectional Transmission Electron Microscopy
Creator
NRID
1000070314424 1000070314424
ORCID
0000-0001-9078-2541 0000-0001-9078-2541
researchmap permalink
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Scopus Author ID
55552977400 55552977400
CreatorName
Sato, Kazuhisa
CreatorName
Matsushita, Toshiya
Description
Kazuhisa Sato and Toshiya Matsushita, Stacking Faults and Intercalants in (Ta1–xTix)Se2 Revealed by Cross-Sectional Transmission Electron Microscopy, J. Phys. Chem. C, 2022, 126(33), 14290–14296. © 2022 American Chemical Society
Abstract
Structural defects in the layered compounds (Ta₁₋ₓTiₓ)Se₂(0 ≤ x ≤ 1), characterized by anisotropy in electrical conductivity, have been studied by cross-sectional observation using chemically sensitive high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Intercalants were detected in the widest space between Se atoms across the van der Waals (vdW) gap, regardless of the Ti content (except TiSe₂) or thermal history after the crystal growth. Binary TaSe₂with both 3R and 2H structures includes a high density of stacking faults, while Ti addition stabilizes the 1T structure with no stacking faults. We show that the chemical composition dominates the structural defects in the (Ta₁₋ₓTiₓ)Se₂ compounds. Substitution of Ta with Ti acts as a hole addition, which reduces the number of conduction electrons in the layer, while an intercalated atom in the vdW gap may not act as a donor of conduction electrons.
Publisher
American Chemical Society
Source Title
Journal of Physical Chemistry C
Volume (Issue)
126(33)
Page
14290-14296
Date of Issued
2022-08-25
Language
English
Handle URL
https://hdl.handle.net/11094/89386
PISSN
19327447
eISSN
19327455
NCID
AA1217589X
Relation.isVersionOf
DOI (Publisher Version)
https://doi.org/10.1021/acs.jpcc.2c03943
Access Rights
open access
CopyRight
This document is the Accepted Manuscript version of a Published Work that appeared in final form in J. Phys. Chem. C, © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpcc.2c03943.
oaire:version
Accepted Manuscript
Category
学術雑誌論文 Journal Article