Athermal Solid Phase Reaction in Pt/SiOx Thin Films Induced by Electron Irradiation

Sato, Kazuhisa; Mori, Hirotaro

ACS Omega, 2021, 6(33), 21837-21841

Number of Access:393（2025-08-14 07:54 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89387

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Title
Athermal Solid Phase Reaction in Pt/SiOx Thin Films Induced by Electron Irradiation
Creator
NRID
1000070314424 1000070314424
ORCID
0000-0001-9078-2541 0000-0001-9078-2541
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Scopus Author ID
55552977400 55552977400
CreatorName
Sato, Kazuhisa
NRID
1000010024366 1000010024366
CreatorName
Mori, Hirotaro
Description
Kazuhisa Sato and Hirotaro Mori, Athermal Solid Phase Reaction in Pt/SiOx Thin Films Induced by Electron Irradiation, ACS Omega, 2021, 6 (33), 21837-21841.
Abstract
Microelectronics based on Si requires metal silicide contacts. The ability to form platinum silicide (Pt₂Si) by electronic excitation instead of thermal processes would benefit the field. We studied the effects of electron irradiation on Pt₂Si formation in composite films-composed of Pt and amorphous silicon oxides (a-SiOx)-by transmission electron microscopy and electron diffraction. Pt₂Si formed in Pt/a-SiOx bilayer and a-SiOx/Pt/a-SiOx sandwiched films by 75 keV electron irradiation, at 298 and 90 K. The reaction is attributable to dissociation of SiOx triggered by electronic excitation. In a-SiOx/Pt/a-SiOx sandwiched films, reflections of pure Pt were not present after irradiation, i.e., Pt was completely consumed in the reaction to form Pt₂Si at 298 K. However, in Pt/a-SiOx bilayer films, unreacted Pt remained under the same irradiation conditions. Thus, it can be said that the extent of the interfacial area is the predominant factor in Pt₂Si formation. The morphology of Pt islands extensively changed during Pt₂Si formation even at 90 K. Coalescence and growth of metallic particles (Pt and Pt-Si) are not due to thermal effects during electron irradiation but to athermal processes accompanied by silicide formation. To maintain the reaction interface between metallic particles and the dissociation product (i.e., Si atoms) by electronic excitation, a considerable concomitant morphology change occurs. Elemental analysis indicates that the decrease in Si concentration near Pt is faster than the decrease in O concentration, suggesting formation of a Si depletion zone in the amorphous silicon oxide matrix associated with formation of Pt₂Si.
Publisher
American Chemical Society
Source Title
ACS Omega
Volume (Issue)
6(33)
Page
21837-21841
Date of Issued
2021-08-24
Language
English
Handle URL
https://hdl.handle.net/11094/89387
eISSN
24701343
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DOI (Publisher Version)
https://doi.org/10.1021/acsomega.1c03604
Access Rights
open access
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This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
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Category
学術雑誌論文 Journal Article