Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy

Sato, Kazuhisa; Yasuda, Hidehiro

ACS Omega, 2018, 3(10), 13524-13529

Number of Access:421（2025-08-14 03:54 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89388

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Title
Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy
Creator
NRID
1000070314424 1000070314424
ORCID
0000-0001-9078-2541 0000-0001-9078-2541
researchmap permalink
read0158304 read0158304
Scopus Author ID
55552977400 55552977400
CreatorName
Sato, Kazuhisa
NRID
1000060210259 1000060210259
CreatorName
Yasuda, Hidehiro
Description
Kazuhisa Sato and Hidehiro Yasuda, Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy, ACS Omega 2018, 3(10), 13524–13529. © 2022 American Chemical Society
Abstract
We report on extreme penetration power of relativistic electrons in a micrometer-thick gallium nitride epitaxial film and its application to probing threading dislocations, which were introduced during crystal growth. Maximum usable thickness of the specimen was quantitatively evaluated using high-voltage transmission electron microscopy (TEM) operating at 1 MV. The width of dislocation images was used as a measure for the evaluation of usable thickness. Superior maximum usable thickness was obtained in scanning transmission electron microscopy (STEM) than in TEM mode; the results were 6.9 μm for STEM and 4.4 μm for TEM. In STEM, dislocations can be imaged with an almost constant width of 15–20 nm in a wide thickness range 1–4 μm. The latest high-voltage STEM is thus useful for observing dislocations in micrometer-thick inorganic materials.
Publisher
American Chemical Society
Source Title
ACS Omega
Volume (Issue)
3(10)
Page
13524-13529
Date of Issued
2018-10-31
Language
English
Handle URL
https://hdl.handle.net/11094/89388
eISSN
24701343
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1021/acsomega.8b02078
Access Rights
open access
CopyRight
© 2018 American Chemical Society
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article