Strong atomic ordering in Gd-doped GaN

Ishimaru, Manabu; Higashi, Kotaro; Hasegawa, Shigehiko; Asahi, Hajime; Sato, Kazuhisa; Konno, Toyohiko J.

doi:https://doi.org/10.1063/1.4751245

Strong atomic ordering in Gd-doped GaN

Ishimaru, Manabu; Higashi, Kotaro; Hasegawa, Shigehiko et al.

Applied Physics Letters, 2012, 101(10), 101912

Number of Access:569（2025-08-14 15:05 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89404

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Title	Strong atomic ordering in Gd-doped GaN
Creator	NRID 1000000264086 1000000264086 CreatorName Ishimaru, Manabu
	CreatorName Higashi, Kotaro
	NRID 1000050189528 1000050189528 researchmap permalink Shigehiko_Hasegawa Shigehiko_Hasegawa Scopus Author ID 35419713200 35419713200 CreatorName Hasegawa, Shigehiko
	NRID 1000090192947 1000090192947 CreatorName Asahi, Hajime
	NRID 1000070314424 1000070314424 ORCID 0000-0001-9078-2541 0000-0001-9078-2541 researchmap permalink read0158304 read0158304 Scopus Author ID 55552977400 55552977400 CreatorName Sato, Kazuhisa
	NRID 1000090260447 1000090260447 CreatorName Konno, Toyohiko J.
Description	Manabu Ishimaru, Kotaro Higashi, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, and Toyohiko J. Konno, "Strong atomic ordering in Gd-doped GaN", Appl. Phys. Lett. 101, 101912 (2012) https://doi.org/10.1063/1.4751245.
Abstract	Gd-doped GaN (Ga 1-xGd xN) thin films were grown on a GaN(001) template by radio frequency plasma-assisted molecular beam epitaxy and characterized by means of x-ray diffraction (XRD) and transmission electron microscopy (TEM). Three samples with a different Gd composition were prepared in this study: x = 0.02, 0.05, and 0.08. XRD and TEM results revealed that the low Gd concentration GaN possesses the wurtzite structure. On the other hand, it was found that an ordered phase with a quadruple-periodicity along the [001] direction in the wurtzite structure is formed throughout the film with x = 0.08. We proposed the atomistic model for the superlattice structure observed here. © 2012 American Institute of Physics.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	101(10)
Page	101912
Date of Issued	2012-09-03
Language	English
Handle URL	https://hdl.handle.net/11094/89404
PISSN	00036951
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.4751245
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Manabu Ishimaru, Kotaro Higashi, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, and Toyohiko J. Konno, "Strong atomic ordering in Gd-doped GaN", Appl. Phys. Lett. 101, 101912 (2012) and may be found at https://doi.org/10.1063/1.4751245.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2012, 101(10), p. 101912
DC.title	Strong atomic ordering in Gd-doped GaN
DC.creator	Ishimaru, Manabu
	Higashi, Kotaro
	Hasegawa, Shigehiko
	Asahi, Hajime
	Sato, Kazuhisa
	Konno, Toyohiko J.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2012-09-03
DC.identifier	https://doi.org/10.1063/1.4751245
DC.description	Manabu Ishimaru, Kotaro Higashi, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, and Toyohiko J. Konno, "Strong atomic ordering in Gd-doped GaN", Appl. Phys. Lett. 101, 101912 (2012) https://doi.org/10.1063/1.4751245.
DCTERMS.abstract	Gd-doped GaN (Ga 1-xGd xN) thin films were grown on a GaN(001) template by radio frequency plasma-assisted molecular beam epitaxy and characterized by means of x-ray diffraction (XRD) and transmission electron microscopy (TEM). Three samples with a different Gd composition were prepared in this study: x = 0.02, 0.05, and 0.08. XRD and TEM results revealed that the low Gd concentration GaN possesses the wurtzite structure. On the other hand, it was found that an ordered phase with a quadruple-periodicity along the [001] direction in the wurtzite structure is formed throughout the film with x = 0.08. We proposed the atomistic model for the superlattice structure observed here. © 2012 American Institute of Physics.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Manabu Ishimaru, Kotaro Higashi, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, and Toyohiko J. Konno, "Strong atomic ordering in Gd-doped GaN", Appl. Phys. Lett. 101, 101912 (2012) and may be found at https://doi.org/10.1063/1.4751245.
DC.format	89404
citation_title	Strong atomic ordering in Gd-doped GaN
citation_author	Ishimaru, Manabu
	Higashi, Kotaro
	Hasegawa, Shigehiko
	Asahi, Hajime
	Sato, Kazuhisa
	Konno, Toyohiko J.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2012-09-03
citation_journal_title	Applied Physics Letters
citation_volume	101
citation_issue	10
citation_firstpage	101912
citation_doi	https://doi.org/10.1063/1.4751245
citation_public_url	https://hdl.handle.net/11094/89404

Strong atomic ordering in Gd-doped GaN

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