Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices

Sakuraba, Y.; Ueda, M.; Miura, Y.; Sato, K.; Bosu, S.; Saito, K.; Shirai, M.; Konno, T. J.; Takanashi, K.

doi:https://doi.org/10.1063/1.4772546

Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices

Sakuraba, Y.; Ueda, M.; Miura, Y. et al.

Applied Physics Letters, 2012, 101(25), 252408

Number of Access:760（2025-08-16 00:37 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89406

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Title	Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices
Creator	NRID 1000010451618 1000010451618 CreatorName Sakuraba, Y.
	CreatorName Ueda, M.
	NRID 1000010361198 1000010361198 CreatorName Miura, Y.
	NRID 1000070314424 1000070314424 ORCID 0000-0001-9078-2541 0000-0001-9078-2541 researchmap permalink read0158304 read0158304 Scopus Author ID 55552977400 55552977400 CreatorName Sato, K.
	CreatorName Bosu, S.
	CreatorName Saito, K.
	CreatorName Shirai, M.
	NRID 1000090260447 1000090260447 CreatorName Konno, T. J.
	NRID 1000000187981 1000000187981 CreatorName Takanashi, K.
Description	Y. Sakuraba, M. Ueda, Y. Miura, K. Sato, S. Bosu, K. Saito, M. Shirai, T. J. Konno, and K. Takanashi, "Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices", Appl. Phys. Lett. 101, 252408 (2012) https://doi.org/10.1063/1.4772546.
Abstract	Fully epitaxial Co₂FexMn1- xSi(CFMS)/Ag/Co₂FexMn1 -xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses t CFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives. © 2012 American Institute of Physics.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	101(25)
Page	252408
Date of Issued	2012-12-17
Language	English
Handle URL	https://hdl.handle.net/11094/89406
PISSN	00036951
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.4772546
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Sakuraba, M. Ueda, Y. Miura, K. Sato, S. Bosu, K. Saito, M. Shirai, T. J. Konno, and K. Takanashi, "Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices", Appl. Phys. Lett. 101, 252408 (2012) and may be found at https://doi.org/10.1063/1.4772546.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2012, 101(25), p. 252408
DC.title	Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices
DC.creator	Sakuraba, Y.
	Ueda, M.
	Miura, Y.
	Sato, K.
	Bosu, S.
	Saito, K.
	Shirai, M.
	Konno, T. J.
	Takanashi, K.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2012-12-17
DC.identifier	https://doi.org/10.1063/1.4772546
DC.description	Y. Sakuraba, M. Ueda, Y. Miura, K. Sato, S. Bosu, K. Saito, M. Shirai, T. J. Konno, and K. Takanashi, "Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices", Appl. Phys. Lett. 101, 252408 (2012) https://doi.org/10.1063/1.4772546.
DCTERMS.abstract	Fully epitaxial Co₂FexMn1- xSi(CFMS)/Ag/Co₂FexMn1 -xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses t CFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives. © 2012 American Institute of Physics.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Sakuraba, M. Ueda, Y. Miura, K. Sato, S. Bosu, K. Saito, M. Shirai, T. J. Konno, and K. Takanashi, "Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices", Appl. Phys. Lett. 101, 252408 (2012) and may be found at https://doi.org/10.1063/1.4772546.
DC.format	89406
citation_title	Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices
citation_author	Sakuraba, Y.
	Ueda, M.
	Miura, Y.
	Sato, K.
	Bosu, S.
	Saito, K.
	Shirai, M.
	Konno, T. J.
	Takanashi, K.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2012-12-17
citation_journal_title	Applied Physics Letters
citation_volume	101
citation_issue	25
citation_firstpage	252408
citation_doi	https://doi.org/10.1063/1.4772546
citation_public_url	https://hdl.handle.net/11094/89406

Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices

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