Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor

Naito, T.; Nishimura, R.; Yamada, M.; Masago, A.; Shiratsuchi, Y.; Wagatsuma, Y.; Sawano, K.; Nakatani, R.; Oguchi, T.; Hamaya, K.

doi:https://doi.org/10.1103/PhysRevB.105.195308

Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor

Naito, T.; Nishimura, R.; Yamada, M. et al.

Physical Review B, 2022, 105(19), 195308

Number of Access:1,056（2025-10-26 01:03 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89428

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Title	Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor
Creator	CreatorName Naito, T.
	CreatorName Nishimura, R.
	CreatorName Yamada, M.
	CreatorName Masago, A.
	CreatorName Shiratsuchi, Y.
	CreatorName Wagatsuma, Y.
	CreatorName Sawano, K.
	CreatorName Nakatani, R.
	NRID 1000090253054 1000090253054 researchmap permalink _BAND _BAND Scopus Author ID 7102491594 7102491594 CreatorName Oguchi, T.
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 CreatorName Hamaya, K.
Description	T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi, Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, and K. Hamaya, Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor, Phys. Rev. B 105, 195308.
Abstract	Using controlled ferromagnet (FM) -semiconductor (SC) interfaces in SC-based lateral spin-valve (LSV) devices, we experimentally study the effect of interfacial spin moments in FM-SC heterojunctions on spin transport in SC. First-principles calculations predict that the spin moment of FM-SC junctions can be artificially reduced by inserting 3d transition metal V, Cr, or Cu atomic layers between FM and SC. When all-epitaxial FM-SC Schottky-tunnel contacts with a 0.4-0.5-nm-thick V, Cr, or Cu interfacial layer are formed, we find that the spin signals in FM-SC LSV devices are significantly decreased at 8 K. When we increase the interfacial spin moment by inserting an ∼0.3-nm-thick Co layer between FM and SC, the spin signals at 8 K are significantly enhanced again. From these experiments, we conclude that the interfacial spin moments at FM-SC interfaces are one of the important factors to achieve large spin signals even in SC-based spintronic devices.
Publisher	American Physical Society
Source Title	Physical Review B
Volume (Issue)	105(19)
Page	195308
Date of Issued	2022-05-13
Language	English
Handle URL	https://hdl.handle.net/11094/89428
PISSN	24699950
eISSN	24699969
NCID	AA11187113
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1103/PhysRevB.105.195308
Access Rights	open access
CopyRight	Copyright 2022 by the American Physical Society
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Physical Review B. 2022, 105(19), p. 195308
DC.title	Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor
DC.creator	Naito, T.
	Nishimura, R.
	Yamada, M.
	Masago, A.
	Shiratsuchi, Y.
	Wagatsuma, Y.
	Sawano, K.
	Nakatani, R.
	Oguchi, T.
	Hamaya, K.
DC.publisher	American Physical Society
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2022-05-13
DC.identifier	https://doi.org/10.1103/PhysRevB.105.195308
DC.description	T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi, Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, and K. Hamaya, Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor, Phys. Rev. B 105, 195308.
DCTERMS.abstract	Using controlled ferromagnet (FM) -semiconductor (SC) interfaces in SC-based lateral spin-valve (LSV) devices, we experimentally study the effect of interfacial spin moments in FM-SC heterojunctions on spin transport in SC. First-principles calculations predict that the spin moment of FM-SC junctions can be artificially reduced by inserting 3d transition metal V, Cr, or Cu atomic layers between FM and SC. When all-epitaxial FM-SC Schottky-tunnel contacts with a 0.4-0.5-nm-thick V, Cr, or Cu interfacial layer are formed, we find that the spin signals in FM-SC LSV devices are significantly decreased at 8 K. When we increase the interfacial spin moment by inserting an ∼0.3-nm-thick Co layer between FM and SC, the spin signals at 8 K are significantly enhanced again. From these experiments, we conclude that the interfacial spin moments at FM-SC interfaces are one of the important factors to achieve large spin signals even in SC-based spintronic devices.
DC.rights	Copyright 2022 by the American Physical Society
DC.format	89428
citation_title	Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor
citation_author	Naito, T.
	Nishimura, R.
	Yamada, M.
	Masago, A.
	Shiratsuchi, Y.
	Wagatsuma, Y.
	Sawano, K.
	Nakatani, R.
	Oguchi, T.
	Hamaya, K.
citation_publisher	American Physical Society
citation_language	English
citation_date	2022-05-13
citation_journal_title	Physical Review B
citation_volume	105
citation_issue	19
citation_firstpage	195308
citation_doi	https://doi.org/10.1103/PhysRevB.105.195308
citation_public_url	https://hdl.handle.net/11094/89428

Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor

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