High-voltage scanning transmission electron microscopy: A tool for structural characterization of micrometer-thick specimens

Sato, Kazuhisa; Yamashita, Yuki; Yasuda, Hidehiro et al.

Materials Transactions, 2019, 60(5), 675-677

Number of Access:321（2025-08-16 00:38 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89450

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Title
High-voltage scanning transmission electron microscopy: A tool for structural characterization of micrometer-thick specimens
Creator
NRID
1000070314424 1000070314424
ORCID
0000-0001-9078-2541 0000-0001-9078-2541
researchmap permalink
read0158304 read0158304
Scopus Author ID
55552977400 55552977400
CreatorName
Sato, Kazuhisa
CreatorName
Yamashita, Yuki
NRID
1000060210259 1000060210259
CreatorName
Yasuda, Hidehiro
NRID
1000010024366 1000010024366
CreatorName
Mori, Hirotaro
Subject
Dislocation
High-voltage electron microscopy (HVEM)
Indentation
Scanning transmission electron microscopy (STEM)
Silicon wafer
Abstract
Herein, the advantages of high-voltage scanning transmission electron microscopy (STEM) as a tool for structural characterization of micrometer-thick specimens are reported. Dislocations introduced in a wedge-shaped Si crystal were clearly observed by bright-field STEM operating at 1 MV. Many of the dislocations were straight and parallel to the 〈110〉, 〈112〉 or 〈113〉 directions. The widths of the dislocations in the STEM images were almost constant at 13–16 nm (i.e., 4–5 pixels) in the thickness range between 1 and 7.5 µm. The latest high-voltage STEM instrumentation is thus useful for imaging crystal defects in micrometer-thick materials, and enables multi-scale fields of view from a few nanometers squared to over 100 µm2.
Publisher
The Japan Institute of Metals and Materials
Source Title
Materials Transactions
Volume (Issue)
60(5)
Page
675-677
Date of Issued
2019-05-01
Language
English
Handle URL
https://hdl.handle.net/11094/89450
PISSN
13459678
eISSN
13475320
NCID
AA1151294X
AA12041816
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.2320/matertrans.MC201801
Access Rights
open access
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article