Increase of Néel temperature of magnetoelectric Cr₂O₃ thin film by epitaxial lattice matching

Wang, Xinrui; Ujimoto, Kakeru; Toyoki, Kentaro; Nakatani, Ryoichi; Shiratsuchi, Yu

doi:https://doi.org/10.1063/5.0116968

Increase of Néel temperature of magnetoelectric Cr₂O₃ thin film by epitaxial lattice matching

Wang, Xinrui; Ujimoto, Kakeru; Toyoki, Kentaro et al.

Applied Physics Letters, 2022, 121(18), 182402

Number of Access:881（2025-08-14 01:55 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89942

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Title	Increase of Néel temperature of magnetoelectric Cr₂O₃ thin film by epitaxial lattice matching
Creator	CreatorName Wang, Xinrui
	CreatorName Ujimoto, Kakeru
	NRID 1000090780007 1000090780007 ORCID 0000-0003-2887-0326 0000-0003-2887-0326 researchmap permalink k_toyoki k_toyoki Scopus Author ID 55970429100 55970429100 CreatorName Toyoki, Kentaro
	NRID 1000060314374 1000060314374 researchmap permalink read0068619 read0068619 Scopus Author ID 7005234924 7005234924 CreatorName Nakatani, Ryoichi
	NRID 1000070379121 1000070379121 ORCID 0000-0002-8938-4869 0000-0002-8938-4869 researchmap permalink read0090304 read0090304 Scopus Author ID 6602197167 6602197167 CreatorName Shiratsuchi, Yu
Description	Xinrui Wang, Kakeru Ujimoto, Kentaro Toyoki, Ryoichi Nakatani, and Yu Shiratsuchi, Appl. Phys. 121, 182402 (2022); https://doi.org/10.1063/5.0116968
Abstract	Increase in the Néel temperature (TN) of the 10-nm thick Cr₂O3(0001) thin films by the lattice strain was experimentally investigated. TN was determined based on the zero-offset anomalous Hall measurements for the Pt/Cr₂O₃/Pt epitaxial trilayer. The lattice strain was altered by the Pt buffer layer thickness and was evaluated by the lattice parameters. TN was increased from 241.5 to 260.0 K by varying the Pt buffer layer thickness from 0 to 20 nm. For the film without the Pt buffer layer, the apparent critical exponent near TN increased suggesting the distribution of TN due to the inhomogeneous strain. The TN value was weakly correlated with the axial ratio c/a and the lattice volume of the Cr₂O₃ layer V; TN increases with decreasing c/a or increasing V. The increase in TN by the reduction in c/a (or by increasing V) implies that the exchange coupling between the nearest neighbor Cr³⁺ spins has the significant role in the strain effect.
Publisher	AIP Publishing
Source Title	Applied Physics Letters
Volume (Issue)	121(18)
Page	182402
Date of Issued	2022-11-01
Language	English
Handle URL	https://hdl.handle.net/11094/89942
PISSN	00036951
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/5.0116968
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/5.0116968
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2022, 121(18), p. 182402
DC.title	Increase of Néel temperature of magnetoelectric Cr₂O₃ thin film by epitaxial lattice matching
DC.creator	Wang, Xinrui
	Ujimoto, Kakeru
	Toyoki, Kentaro
	Nakatani, Ryoichi
	Shiratsuchi, Yu
DC.publisher	AIP Publishing
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2022-11-01
DC.identifier	https://doi.org/10.1063/5.0116968
DC.description	Xinrui Wang, Kakeru Ujimoto, Kentaro Toyoki, Ryoichi Nakatani, and Yu Shiratsuchi, Appl. Phys. 121, 182402 (2022); https://doi.org/10.1063/5.0116968
DCTERMS.abstract	Increase in the Néel temperature (TN) of the 10-nm thick Cr₂O3(0001) thin films by the lattice strain was experimentally investigated. TN was determined based on the zero-offset anomalous Hall measurements for the Pt/Cr₂O₃/Pt epitaxial trilayer. The lattice strain was altered by the Pt buffer layer thickness and was evaluated by the lattice parameters. TN was increased from 241.5 to 260.0 K by varying the Pt buffer layer thickness from 0 to 20 nm. For the film without the Pt buffer layer, the apparent critical exponent near TN increased suggesting the distribution of TN due to the inhomogeneous strain. The TN value was weakly correlated with the axial ratio c/a and the lattice volume of the Cr₂O₃ layer V; TN increases with decreasing c/a or increasing V. The increase in TN by the reduction in c/a (or by increasing V) implies that the exchange coupling between the nearest neighbor Cr³⁺ spins has the significant role in the strain effect.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/5.0116968
DC.format	89942
citation_title	Increase of Néel temperature of magnetoelectric Cr₂O₃ thin film by epitaxial lattice matching
citation_author	Wang, Xinrui
	Ujimoto, Kakeru
	Toyoki, Kentaro
	Nakatani, Ryoichi
	Shiratsuchi, Yu
citation_publisher	AIP Publishing
citation_language	English
citation_date	2022-11-01
citation_journal_title	Applied Physics Letters
citation_volume	121
citation_issue	18
citation_firstpage	182402
citation_doi	https://doi.org/10.1063/5.0116968
citation_public_url	https://hdl.handle.net/11094/89942

Increase of Néel temperature of magnetoelectric Cr₂O₃ thin film by epitaxial lattice matching

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