Antiferromagnetic domain wall creep driven by magnetoelectric effect

Shiratsuchi, Yu; Yoshida, Hiroaki; Kotani, Yoshinori; Toyoki, Kentaro; Nguyen, Thi Van Anh; Nakamura, Tetsuya; Nakatani, Ryoichi

doi:https://doi.org/10.1063/1.5053928

Antiferromagnetic domain wall creep driven by magnetoelectric effect

Shiratsuchi, Yu; Yoshida, Hiroaki; Kotani, Yoshinori et al.

APL Materials, 2018, 6(12), 121104

Number of Access:832（2025-08-15 01:09 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89969

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Title	Antiferromagnetic domain wall creep driven by magnetoelectric effect
Creator	NRID 1000070379121 1000070379121 ORCID 0000-0002-8938-4869 0000-0002-8938-4869 researchmap permalink read0090304 read0090304 Scopus Author ID 6602197167 6602197167 CreatorName Shiratsuchi, Yu
	CreatorName Yoshida, Hiroaki
	NRID 1000010596464 1000010596464 CreatorName Kotani, Yoshinori
	NRID 1000090780007 1000090780007 ORCID 0000-0003-2887-0326 0000-0003-2887-0326 researchmap permalink k_toyoki k_toyoki Scopus Author ID 55970429100 55970429100 CreatorName Toyoki, Kentaro
	NRID 1000020840101 1000020840101 CreatorName Nguyen, Thi Van Anh
	NRID 1000070311355 1000070311355 CreatorName Nakamura, Tetsuya
	NRID 1000060314374 1000060314374 researchmap permalink read0068619 read0068619 Scopus Author ID 7005234924 7005234924 CreatorName Nakatani, Ryoichi
Description	Yu Shiratsuchi, Hiroaki Yoshida, Yoshinori Kotani, Kentaro Toyoki, Thi Van Anh Nguyen, Tetsuya Nakamura, and Ryoichi Nakatani, APL Materials 6, 121104 (2018); https://doi.org/10.1063/1.5053928.
Abstract	We observed the magnetoelectric induced domain wall propagation in a Pt/Co/Au/Cr₂O₃/Pt stacked thin film based on magnetic domain observations using scanning soft X-ray magnetic circular dichroism microscopy. The antiferromagnetic (Cr₂O₃) domain wall velocity was estimated by a quasi-static approach using a pulsed voltage. At a pulse voltage amplitude of -12 V, corresponding to an electric field of -8.0 × 10²kV/cm, the domain wall velocity was very low, at 0.3 m/s. The domain wall velocity increased with increasing voltage amplitude, reaching 22 m/s at -20 V (-1.3 × 10³kV/cm). The change in the domain wall velocity with the applied voltage amplitude indicates the creep motion of the domain wall. Using a phenomenological model, we estimated the domain wall depinning energy, and found that the bulk and interface terms of the magnetic anisotropy affect the effective magnetic field to the same degree, suggesting that the magnetic domain wall motion may be controllable by the antiferromagnetic layer thickness.
Publisher	American Institute of Physics
Source Title	APL Materials
Volume (Issue)	6(12)
Page	121104
Date of Issued	2018-12-13
Language	English
Handle URL	https://hdl.handle.net/11094/89969
eISSN	2166532X
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.5053928
Access Rights	open access
CopyRight	Copyright 2018 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	APL Materials. 2018, 6(12), p. 121104
DC.title	Antiferromagnetic domain wall creep driven by magnetoelectric effect
DC.creator	Shiratsuchi, Yu
	Yoshida, Hiroaki
	Kotani, Yoshinori
	Toyoki, Kentaro
	Nguyen, Thi Van Anh
	Nakamura, Tetsuya
	Nakatani, Ryoichi
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2018-12-13
DC.identifier	https://doi.org/10.1063/1.5053928
DC.description	Yu Shiratsuchi, Hiroaki Yoshida, Yoshinori Kotani, Kentaro Toyoki, Thi Van Anh Nguyen, Tetsuya Nakamura, and Ryoichi Nakatani, APL Materials 6, 121104 (2018); https://doi.org/10.1063/1.5053928.
DCTERMS.abstract	We observed the magnetoelectric induced domain wall propagation in a Pt/Co/Au/Cr₂O₃/Pt stacked thin film based on magnetic domain observations using scanning soft X-ray magnetic circular dichroism microscopy. The antiferromagnetic (Cr₂O₃) domain wall velocity was estimated by a quasi-static approach using a pulsed voltage. At a pulse voltage amplitude of -12 V, corresponding to an electric field of -8.0 × 10²kV/cm, the domain wall velocity was very low, at 0.3 m/s. The domain wall velocity increased with increasing voltage amplitude, reaching 22 m/s at -20 V (-1.3 × 10³kV/cm). The change in the domain wall velocity with the applied voltage amplitude indicates the creep motion of the domain wall. Using a phenomenological model, we estimated the domain wall depinning energy, and found that the bulk and interface terms of the magnetic anisotropy affect the effective magnetic field to the same degree, suggesting that the magnetic domain wall motion may be controllable by the antiferromagnetic layer thickness.
DC.rights	Copyright 2018 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.
DC.format	89969
citation_title	Antiferromagnetic domain wall creep driven by magnetoelectric effect
citation_author	Shiratsuchi, Yu
	Yoshida, Hiroaki
	Kotani, Yoshinori
	Toyoki, Kentaro
	Nguyen, Thi Van Anh
	Nakamura, Tetsuya
	Nakatani, Ryoichi
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2018-12-13
citation_journal_title	APL Materials
citation_volume	6
citation_issue	12
citation_firstpage	121104
citation_doi	https://doi.org/10.1063/1.5053928
citation_public_url	https://hdl.handle.net/11094/89969

Antiferromagnetic domain wall creep driven by magnetoelectric effect

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