Magnetic field dependence of threshold electric field for magnetoelectric switching of exchange-bias polarity

Nguyen, Thi Van Anh; Shiratsuchi, Yu; Kobane, Atsushi et al.

Journal of Applied Physics, 2017, 122(7), 073905

Number of Access:742（2025-08-16 00:38 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/89973

Link to primary information 

File Format Terms of use Size Views Date.Available Description information
JApplPhys_122_7 pdf None 745 KB 117 2023.02.01  

Item Information

Output File Export EndNote Basic Export Mendeley

Title
Magnetic field dependence of threshold electric field for magnetoelectric switching of exchange-bias polarity
Creator
NRID
1000020840101 1000020840101
CreatorName
Nguyen, Thi Van Anh
NRID
1000070379121 1000070379121
ORCID
0000-0002-8938-4869 0000-0002-8938-4869
researchmap permalink
read0090304 read0090304
Scopus Author ID
6602197167 6602197167
CreatorName
Shiratsuchi, Yu
CreatorName
Kobane, Atsushi
CreatorName
Yoshida, Saori
NRID
1000060314374 1000060314374
researchmap permalink
read0068619 read0068619
Scopus Author ID
7005234924 7005234924
CreatorName
Nakatani, Ryoichi
Description
Thi Van Anh Nguyen, Yu Shiratsuchi, Atsushi Kobane, Saori Yoshida, and Ryoichi Nakatani, Journal of Applied Physics 122, 073905 (2017); https://doi.org/10.1063/1.4991053.
Abstract
We report the magnetic field dependence of the threshold electric field Eth for the magnetoelectric switching of the perpendicular exchange bias in Pt/Co/Au/Cr₂O₃/Pt stacked films using a reversible isothermal electric tuning approach. The Eth values for the positive-to-negative and negative-to-positive switching are different because of the unidirectional nature of the interfacial exchange coupling. The Eth values are inversely proportional to the magnetic-field strength, and the quantitative analysis of this relationship suggests that the switching is driven by the nucleation and growth of the antiferromagnetic domain. We also find that the magnetic-field dependence of Eth exhibits an offset electric field that might be related to the uncompensated antiferromagnetic moments located mainly at the interface.
Publisher
American Institute of Physics
Source Title
Journal of Applied Physics
Volume (Issue)
122(7)
Page
073905
Date of Issued
2017-08-17
Language
English
Handle URL
https://hdl.handle.net/11094/89973
PISSN
00218979
eISSN
10897550
NCID
AA00693547
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1063/1.4991053
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Thi Van Anh Nguyen, Yu Shiratsuchi, Atsushi Kobane, Saori Yoshida, and Ryoichi Nakatani, Journal of Applied Physics 122, 073905 (2017) and may be found at https://doi.org/10.1063/1.4991053.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article