Stacking order reduction in multilayer graphene by inserting nanospacers

Xu, Zizhao; Inoue, Taiki; Nishina, Yuta et al.

Journal of Applied Physics, 2022, 132(17), 174305

Number of Access:619（2025-10-09 08:16 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/90054

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Title
Stacking order reduction in multilayer graphene by inserting nanospacers
Creator
CreatorName
Xu, Zizhao
NRID
1000000748949 1000000748949
ORCID
0000-0003-1739-917X 0000-0003-1739-917X
researchmap permalink
inoue_t inoue_t
Scopus Author ID
37261439700 37261439700
CreatorName
Inoue, Taiki
NRID
1000050585940 1000050585940
CreatorName
Nishina, Yuta
NRID
1000030393739 1000030393739
ORCID
0000-0002-0486-7846 0000-0002-0486-7846
researchmap permalink
koba_ap_eng_ou koba_ap_eng_ou
Scopus Author ID
7408650102 7408650102
CreatorName
Kobayashi, Yoshihiro
Description
Zizhao Xu, Taiki Inoue, Yuta Nishina, and Yoshihiro Kobayashi, "Stacking order reduction in multilayer graphene by inserting nanospacers", Journal of Applied Physics 132, 174305 (2022) https://doi.org/10.1063/5.0103826
Abstract
Toward macroscopic applications of graphene, it is desirable to preserve the superior properties of single-layer graphene in bulk scale. However, the AB-stacking structure is thermodynamically favored for multilayer graphene and causes strong interlayer interactions, resulting in property degradation. A promising approach to prevent the strong interlayer interaction is the staking order reduction of graphene, where the graphene layers are rotated in-plane to form a randomly stacking structure. In this study, we propose a strategy to effectively decrease the stacking order of multilayer graphene by incorporating nanospacers, cellulose nanofibers, or nano-diamonds (NDs) in the formation process of porous graphene sponges. We conducted an ultrahigh temperature treatment at 1500 °C with ethanol vapor for the reduction and structural repair of graphene oxide sponges with different concentrations of the nanospacers. Raman spectroscopy indicated an obvious increase in the random-stacking fraction of graphene by adding the nanospacers. The x-ray diffraction (XRD) analysis revealed that a small amount of the nanospacers induced a remarkable decrease in ordered graphene crystalline size in the stacking direction. It was also confirmed that a layer-number increase during the thermal treatment was suppressed by the nanospacers. The increase in the random-stacking fraction is attributed to the efficient formation of randomly rotated graphene through the ethanol-mediated structural restoration of relatively thin layers induced by the nanospacers. This stacking-order-reduced graphene with bulk scale is expected to be used in macroscopic applications, such as electrode materials and wearable devices.
Publisher
American Institute of Physics Inc.
Source Title
Journal of Applied Physics
Volume (Issue)
132(17)
Page
174305
Date of Issued
2022-11-07
Language
English
Handle URL
https://hdl.handle.net/11094/90054
PISSN
00218979
eISSN
10897550
NCID
AA00693547
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1063/5.0103826
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Zizhao Xu, Taiki Inoue, Yuta Nishina, and Yoshihiro Kobayashi, "Stacking order reduction in multilayer graphene by inserting nanospacers", Journal of Applied Physics 132, 174305 (2022) and may be found at https://doi.org/10.1063/5.0103826.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article