Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films

Shimura, Takayoshi; Tanaka, Shogo; Hosoi, Takuji; Watanabe, Heiji

doi:https://doi.org/10.1007/s11664-023-10309-w

Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films

Shimura, Takayoshi; Tanaka, Shogo; Hosoi, Takuji et al.

Journal of Electronic Materials, 2023, 52, 5053-5058

Number of Access:809（2025-08-18 23:04 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/90201

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Title	Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films
Creator	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	CreatorName Tanaka, Shogo
	NRID 1000090452466 1000090452466 CreatorName Hosoi, Takuji
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
Subject	Ge
	silicon photonics
	tensile strain
	internal stress
	photoluminescence
	electroluminescence
Description	This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1007/s11664-023-10309-w.
Abstract	We examined the fabrication process of uniaxial tensile-strained Ge wires in micro-bridge structures by utilizing the internal stresses in deposited metal thin films. This method enables strain control by adjusting film-deposition conditions, which is advantageous over previous methods that utilize internal stresses unintentionally applied to Ge-on-insulator substrates. We evaluated the internal stresses in W films formed by sputtering deposition methods. Tensile and compressive stresses were determined based on the Ar gas pressure during the deposition process. We applied tensile strain to Ge wires using 100-nm-thick W films, each with a tensile stress of 890 MPa, deposited in 1.5-Pa Ar gas. We confirmed that strains of up to 1.62% can be achieved and controlled by tuning the structural parameters of the bridge structure with the Ge wires. Photoluminescence peaks shifted to lower energies with increasing strain, in good agreement with theoretical predictions. We also used strained Ge wires to fabricate light-emitting diodes that exhibited clear electroluminescence peaks indicative of band structural modulation in the Ge wires.
Publisher	Springer
Source Title	Journal of Electronic Materials
Volume (Issue)	52
Page	5053-5058
Date of Issued	2023-03-06
Handle URL	https://hdl.handle.net/11094/90201
PISSN	03615235
eISSN	1543186X
NCID	AA00697093
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1007/s11664-023-10309-w
Access Rights	open access
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Journal of Electronic Materials. 2023, 52, p. 5053-5058
DC.title	Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films
DC.creator	Shimura, Takayoshi
	Tanaka, Shogo
	Hosoi, Takuji
	Watanabe, Heiji
DC.publisher	Springer
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-03-06
DC.identifier	https://doi.org/10.1007/s11664-023-10309-w
DC.subject	Ge
	silicon photonics
	tensile strain
	internal stress
	photoluminescence
	electroluminescence
DC.description	This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1007/s11664-023-10309-w.
DCTERMS.abstract	We examined the fabrication process of uniaxial tensile-strained Ge wires in micro-bridge structures by utilizing the internal stresses in deposited metal thin films. This method enables strain control by adjusting film-deposition conditions, which is advantageous over previous methods that utilize internal stresses unintentionally applied to Ge-on-insulator substrates. We evaluated the internal stresses in W films formed by sputtering deposition methods. Tensile and compressive stresses were determined based on the Ar gas pressure during the deposition process. We applied tensile strain to Ge wires using 100-nm-thick W films, each with a tensile stress of 890 MPa, deposited in 1.5-Pa Ar gas. We confirmed that strains of up to 1.62% can be achieved and controlled by tuning the structural parameters of the bridge structure with the Ge wires. Photoluminescence peaks shifted to lower energies with increasing strain, in good agreement with theoretical predictions. We also used strained Ge wires to fabricate light-emitting diodes that exhibited clear electroluminescence peaks indicative of band structural modulation in the Ge wires.
DC.format	90201
citation_title	Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films
citation_author	Shimura, Takayoshi
	Tanaka, Shogo
	Hosoi, Takuji
	Watanabe, Heiji
citation_publisher	Springer
citation_date	2023-03-06
citation_journal_title	Journal of Electronic Materials
citation_volume	52
citation_firstpage	5053
citation_lastpage	5058
citation_doi	https://doi.org/10.1007/s11664-023-10309-w
citation_public_url	https://hdl.handle.net/11094/90201

Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films

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