Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

Shimura, Takayoshi; Yamaguchi, Ryoga; Tabuchi, Naoto; Kondoh, Masato; Kuniyoshi, Mizuki; Hosoi, Takuji; Kobayashi, Takuma; Watanabe, Heiji

doi:https://doi.org/10.35848/1347-4065/acb9a2

Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

Shimura, Takayoshi; Yamaguchi, Ryoga; Tabuchi, Naoto et al.

Japanese Journal of Applied Physics, 2023, 62, SC1083

Number of Access:916（2025-08-18 23:04 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/90202

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Title	Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates
Creator	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	CreatorName Yamaguchi, Ryoga
	CreatorName Tabuchi, Naoto
	CreatorName Kondoh, Masato
	NRID 1000040897443 1000040897443 CreatorName Kuniyoshi, Mizuki
	NRID 1000090452466 1000090452466 CreatorName Hosoi, Takuji
	NRID 1000020827711 1000020827711 ORCID 0000-0002-2755-5079 0000-0002-2755-5079 researchmap permalink takumakobayashi takumakobayashi Scopus Author ID 57203742549 57203742549 CreatorName Kobayashi, Takuma
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
Description	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/acb9a2.
Abstract	We examined the effects of the laser scan speed and power on the Sn fraction and crystallinity of GeSn wires of 1 μm width and 1 mm length fabricated by laser-induced local liquid phase crystallization on quartz substrates. The Sn fraction increased from 1% to 3.5% with an increasing scan speed from 5 to 100 μm s⁻¹, corresponding to a luminescence wavelength of 1770–2070 nm. This result can be interpreted as the scan speed dependence of the non-equilibrium degree during crystal growth. The increase in the laser power reduced the Sn fraction and caused a blue shift in the luminescence wavelength. We discuss these phenomena based on the growth kinetics of zone melting.
Publisher	IOP Publishing
Source Title	Japanese Journal of Applied Physics
Volume (Issue)	62
Page	SC1083
Date of Issued	2023-03-01
Handle URL	https://hdl.handle.net/11094/90202
PISSN	00214922
eISSN	13474065
NCID	AA12295836
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.35848/1347-4065/acb9a2
Access Rights	open access
CopyRight	This Accepted Manuscript is available for reuse under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License after the 12 month embargo period provided that all the terms of the licence are adhered to.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Japanese Journal of Applied Physics. 2023, 62, p. SC1083
DC.title	Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates
DC.creator	Shimura, Takayoshi
	Yamaguchi, Ryoga
	Tabuchi, Naoto
	Kondoh, Masato
	Kuniyoshi, Mizuki
	Hosoi, Takuji
	Kobayashi, Takuma
	Watanabe, Heiji
DC.publisher	IOP Publishing
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-03-01
DC.identifier	https://doi.org/10.35848/1347-4065/acb9a2
DC.description	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/acb9a2.
DCTERMS.abstract	We examined the effects of the laser scan speed and power on the Sn fraction and crystallinity of GeSn wires of 1 μm width and 1 mm length fabricated by laser-induced local liquid phase crystallization on quartz substrates. The Sn fraction increased from 1% to 3.5% with an increasing scan speed from 5 to 100 μm s⁻¹, corresponding to a luminescence wavelength of 1770–2070 nm. This result can be interpreted as the scan speed dependence of the non-equilibrium degree during crystal growth. The increase in the laser power reduced the Sn fraction and caused a blue shift in the luminescence wavelength. We discuss these phenomena based on the growth kinetics of zone melting.
DC.rights	This Accepted Manuscript is available for reuse under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License after the 12 month embargo period provided that all the terms of the licence are adhered to.
DC.format	90202
citation_title	Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates
citation_author	Shimura, Takayoshi
	Yamaguchi, Ryoga
	Tabuchi, Naoto
	Kondoh, Masato
	Kuniyoshi, Mizuki
	Hosoi, Takuji
	Kobayashi, Takuma
	Watanabe, Heiji
citation_publisher	IOP Publishing
citation_date	2023-03-01
citation_journal_title	Japanese Journal of Applied Physics
citation_volume	62
citation_firstpage	SC1083
citation_doi	https://doi.org/10.35848/1347-4065/acb9a2
citation_public_url	https://hdl.handle.net/11094/90202

Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

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