Gate-induced switching of perpendicular exchange bias with very low coercivity in Pt/Co/Ir/Cr2O3/Pt epitaxial film

Ekawa, Hirofumi; Shen, Jiaqi; Toyoki, Kentaro et al.

Applied Physics Letters, 2023, 122(6), 062404

Number of Access:846（2025-08-14 15:05 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/90806

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Title
Gate-induced switching of perpendicular exchange bias with very low coercivity in Pt/Co/Ir/Cr2O3/Pt epitaxial film
Creator
CreatorName
Ekawa, Hirofumi
CreatorName
Shen, Jiaqi
NRID
1000090780007 1000090780007
ORCID
0000-0003-2887-0326 0000-0003-2887-0326
researchmap permalink
k_toyoki k_toyoki
Scopus Author ID
55970429100 55970429100
CreatorName
Toyoki, Kentaro
NRID
1000060314374 1000060314374
researchmap permalink
read0068619 read0068619
Scopus Author ID
7005234924 7005234924
CreatorName
Nakatani, Ryoichi
NRID
1000070379121 1000070379121
ORCID
0000-0002-8938-4869 0000-0002-8938-4869
researchmap permalink
read0090304 read0090304
Scopus Author ID
6602197167 6602197167
CreatorName
Shiratsuchi, Yu
Description
Hirofumi Ekawa, Jiaqi Shen, Kentaro Toyoki, Ryoichi Nakatani, and Yu Shiratsuchi, "Gate-induced switching of perpendicular exchange bias with very low coercivity in Pt/Co/Ir/Cr2O3/Pt epitaxial film", Appl. Phys. Lett. 122, 062404 (2023) https://doi.org/10.1063/5.0131695.
Abstract
We investigate magnetoelectric switching of perpendicular exchange bias with very low coercivity in a Pt/Co/Ir/Cr2O3/Pt epitaxial film. We also optimize the suitable Ir spacer thickness so that the film exhibits the perpendicular exchange bias greater than the coercivity up to the vicinity of the Néel temperature. Main impact of the Ir spacer layer is the significant reduction of coercivity less than 0.5 mT in maintaining both the perpendicular magnetic anisotropy and the perpendicular exchange bias. For the suitable structure, the perpendicular exchange bias was isothermally switched by the gate voltage in combination with the magnetic field. Analysis of the hysteresis of the exchange bias field as a function of the gate voltage suggested that the magnetoelectric coefficient was comparable to the reported value. This implies that the Ir layer does not degrade the efficiency to transfer the magnetoelectrically controlled antiferromagnetic order parameter to the ferromagnetic Pt/Co/Ir trilayer.
Publisher
American Institute of Physics
Source Title
Applied Physics Letters
Volume (Issue)
122(6)
Page
062404
Date of Issued
2023-02-06
Language
English
Handle URL
https://hdl.handle.net/11094/90806
PISSN
00036951
NCID
AA00543431
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1063/5.0131695
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Hirofumi Ekawa, Jiaqi Shen, Kentaro Toyoki, Ryoichi Nakatani, and Yu Shiratsuchi, "Gate-induced switching of perpendicular exchange bias with very low coercivity in Pt/Co/Ir/Cr2O3/Pt epitaxial film", Appl. Phys. Lett. 122, 062404 (2023) and may be found at https://doi.org/10.1063/5.0131695.
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Version of Record
Category
学術雑誌論文 Journal Article