Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices

Yamada, Shinya; Kato, Masatoshi; Ichikawa, Shuhei; Yamada, Michihiro; Naito, Takahiro; Fujiwara, Yasufumi; Hamaya, Kohei

doi:https://doi.org/10.1002/aelm.202300045

Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices

Yamada, Shinya; Kato, Masatoshi; Ichikawa, Shuhei et al.

Advanced Electronic Materials, 2023, 9(7), 2300045

Number of Access:1,411（2025-07-20 17:13 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/92488

Link to primary information

File	Format	Terms of use	Size	Views	Date.Available	Description	information
AdvElectronMater_9_7_2300045	pdf	None	2.63 MB	75	2023.09.07

Creative Commons : Attribution

Item Information

Output File Export EndNote Basic Export Mendeley

Title	Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices
Creator	NRID 1000030725049 1000030725049 ORCID 0000-0001-6340-9151 0000-0001-6340-9151 researchmap permalink shinyayamada shinyayamada Scopus Author ID 56140528400 56140528400 CreatorName Yamada, Shinya
	CreatorName Kato, Masatoshi
	NRID 1000050803673 1000050803673 ORCID 0000-0001-7015-3748 0000-0001-7015-3748 researchmap permalink ichikawa_10 ichikawa_10 Scopus Author ID 55441417500 55441417500 CreatorName Ichikawa, Shuhei
	NRID 1000050778529 1000050778529 ORCID 0000-0002-9623-9926 0000-0002-9623-9926 researchmap permalink YamadaMichihiro YamadaMichihiro Scopus Author ID 57212378385 57212378385 CreatorName Yamada, Michihiro
	CreatorName Naito, Takahiro
	NRID 1000010181421 1000010181421 researchmap permalink read0042513 read0042513 Scopus Author ID 7402562025 7402562025 CreatorName Fujiwara, Yasufumi
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 CreatorName Hamaya, Kohei
Subject	GaN
	half-metallic Heusler alloy
	spin injection
	spin transport
Description	Yamada S., Kato M., Ichikawa S., et al. Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices. Advanced Electronic Materials 9, 2300045 (2023); https://doi.org/10.1002/aelm.202300045.
Abstract	Because spin-orbit coupling in wurtzite semiconductors is relatively weak compared with that in zincblende ones, the III-nitride semiconductor GaN is a promising material for high-performance optical semiconductor spintronic devices such as spin lasers. For the purpose of reducing the operating power of spin lasers, it is necessary to demonstrate highly efficient electrical spin injection from a ferromagnetic material into GaN with a low-resistance contact. Here, an epitaxial half-metallic Heusler alloy Co2FeAlxSi1−x(CFAS)/GaN heterostructure is developed by inserting an ultrathin Co layer between the CFAS and GaN. The CFAS/n+-GaN heterojunctions clearly show tunnel conduction with very small rectification and a low resistance-area product of ≈3.8 kΩµm2, which is several orders of magnitude smaller than those reported in previous work, at room temperature. Nonlocal spin signals and a Hanle effect curve are observed at low temperatures using lateral spin-valve devices with the CFAS/n+-GaN contacts, suggesting pure spin current transport in bulk GaN. The spin transport is observed at temperatures as high as room temperature, with a high spin polarization of 0.2 at a low bias voltage less than 2.0 V. This study is expected to open a path to GaN-based spintronic devices with highly spin-polarized and low-resistance contacts.
Publisher	John Wiley and Sons Inc
Source Title	Advanced Electronic Materials
Volume (Issue)	9(7)
Page	2300045
Date of Issued	2023-07-01
Language	English
Handle URL	https://hdl.handle.net/11094/92488
eISSN	2199160X
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1002/aelm.202300045
Access Rights	open access
CopyRight	This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Advanced Electronic Materials. 2023, 9(7), p. 2300045
DC.title	Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices
DC.creator	Yamada, Shinya
	Kato, Masatoshi
	Ichikawa, Shuhei
	Yamada, Michihiro
	Naito, Takahiro
	Fujiwara, Yasufumi
	Hamaya, Kohei
DC.publisher	John Wiley and Sons Inc
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-07-01
DC.identifier	https://doi.org/10.1002/aelm.202300045
DC.subject	GaN
	half-metallic Heusler alloy
	spin injection
	spin transport
DC.description	Yamada S., Kato M., Ichikawa S., et al. Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices. Advanced Electronic Materials 9, 2300045 (2023); https://doi.org/10.1002/aelm.202300045.
DCTERMS.abstract	Because spin-orbit coupling in wurtzite semiconductors is relatively weak compared with that in zincblende ones, the III-nitride semiconductor GaN is a promising material for high-performance optical semiconductor spintronic devices such as spin lasers. For the purpose of reducing the operating power of spin lasers, it is necessary to demonstrate highly efficient electrical spin injection from a ferromagnetic material into GaN with a low-resistance contact. Here, an epitaxial half-metallic Heusler alloy Co2FeAlxSi1−x(CFAS)/GaN heterostructure is developed by inserting an ultrathin Co layer between the CFAS and GaN. The CFAS/n+-GaN heterojunctions clearly show tunnel conduction with very small rectification and a low resistance-area product of ≈3.8 kΩµm2, which is several orders of magnitude smaller than those reported in previous work, at room temperature. Nonlocal spin signals and a Hanle effect curve are observed at low temperatures using lateral spin-valve devices with the CFAS/n+-GaN contacts, suggesting pure spin current transport in bulk GaN. The spin transport is observed at temperatures as high as room temperature, with a high spin polarization of 0.2 at a low bias voltage less than 2.0 V. This study is expected to open a path to GaN-based spintronic devices with highly spin-polarized and low-resistance contacts.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	92488
citation_title	Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices
citation_author	Yamada, Shinya
	Kato, Masatoshi
	Ichikawa, Shuhei
	Yamada, Michihiro
	Naito, Takahiro
	Fujiwara, Yasufumi
	Hamaya, Kohei
citation_publisher	John Wiley and Sons Inc
citation_language	English
citation_date	2023-07-01
citation_journal_title	Advanced Electronic Materials
citation_volume	9
citation_issue	7
citation_firstpage	2300045
citation_doi	https://doi.org/10.1002/aelm.202300045
citation_public_url	https://hdl.handle.net/11094/92488

Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices

Link to primary information

Item Information

Show details