Elastic constants of GaN grown by the oxide vapor phase epitaxy method

Fukuda, Hiroki; Nagakubo, Akira; Usami, Shigeyoshi; Imanishi, Masayuki; Mori, Yusuke; Ogi, Hirotsugu

doi:https://doi.org/10.35848/1882-0786/ad0ba2

Elastic constants of GaN grown by the oxide vapor phase epitaxy method

Fukuda, Hiroki; Nagakubo, Akira; Usami, Shigeyoshi et al.

Applied Physics Express, 2024, 17(1), 016501

Number of Access:900（2025-09-28 05:59 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/93616

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Title	Elastic constants of GaN grown by the oxide vapor phase epitaxy method
Creator	CreatorName Fukuda, Hiroki
	NRID 1000070751113 1000070751113 ORCID 0000-0001-7494-5099 0000-0001-7494-5099 researchmap permalink nagakubo nagakubo Scopus Author ID 55329400300 55329400300 CreatorName Nagakubo, Akira
	NRID 1000030897947 1000030897947 researchmap permalink s_usami s_usami Scopus Author ID 56770778200 56770778200 ORCID 0000-0002-9710-1718 0000-0002-9710-1718 CreatorName Usami, Shigeyoshi
	NRID 1000000795487 1000000795487 researchmap permalink Na-flux Na-flux Scopus Author ID 55361211900 55361211900 ORCID 0000-0001-9395-1750 0000-0001-9395-1750 CreatorName Imanishi, Masayuki
	NRID 1000090252618 1000090252618 ORCID 0000-0003-2952-7458 0000-0003-2952-7458 researchmap permalink mori_yusuke mori_yusuke Scopus Author ID 7404197134 7404197134 CreatorName Mori, Yusuke
	NRID 1000090252626 1000090252626 researchmap permalink read0042771 read0042771 Scopus Author ID 35563683500 35563683500 CreatorName Ogi, Hirotsugu
Subject	DFT
	elastic constants
	GaN
	OVPE
	resonant ultrasound spectroscopy
Description	Fukuda H., Nagakubo A., Usami S., et al. Elastic constants of GaN grown by the oxide vapor phase epitaxy method. Applied Physics Express 17, 016501 (2024); https://doi.org/10.35848/1882-0786/ad0ba2.
Abstract	Oxide vapor phase epitaxy (OVPE) has attracted much attention as a highly efficient method for synthesizing high-quality bulk GaN crystals, but the mechanical properties of OVPE GaN have not been clarified. We measured the five independent elastic constants of the OVPE GaN by resonant ultrasound spectroscopy. The in-plane Young modulus E 1 and shear modulus C 66 of the OVPE GaN are smaller than those of the hydride vapor phase epitaxy GaN by 1.8% and 1.3%, respectively. These reductions agree with predictions by density functional theory calculations. We also calculated the Debye temperature, revealing that oxygen impurity decreases its magnitude.
Publisher	Institute of Physics
Source Title	Applied Physics Express
Volume (Issue)	17(1)
Page	016501
Date of Issued	2024-01-01
Language	English
Handle URL	https://hdl.handle.net/11094/93616
PISSN	18820778
eISSN	18820786
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.35848/1882-0786/ad0ba2
Access Rights	open access
CopyRight	This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Express. 2024, 17(1), p. 016501
DC.title	Elastic constants of GaN grown by the oxide vapor phase epitaxy method
DC.creator	Fukuda, Hiroki
	Nagakubo, Akira
	Usami, Shigeyoshi
	Imanishi, Masayuki
	Mori, Yusuke
	Ogi, Hirotsugu
DC.publisher	Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-01-01
DC.identifier	https://doi.org/10.35848/1882-0786/ad0ba2
DC.subject	DFT
	elastic constants
	GaN
	OVPE
	resonant ultrasound spectroscopy
DC.description	Fukuda H., Nagakubo A., Usami S., et al. Elastic constants of GaN grown by the oxide vapor phase epitaxy method. Applied Physics Express 17, 016501 (2024); https://doi.org/10.35848/1882-0786/ad0ba2.
DCTERMS.abstract	Oxide vapor phase epitaxy (OVPE) has attracted much attention as a highly efficient method for synthesizing high-quality bulk GaN crystals, but the mechanical properties of OVPE GaN have not been clarified. We measured the five independent elastic constants of the OVPE GaN by resonant ultrasound spectroscopy. The in-plane Young modulus E 1 and shear modulus C 66 of the OVPE GaN are smaller than those of the hydride vapor phase epitaxy GaN by 1.8% and 1.3%, respectively. These reductions agree with predictions by density functional theory calculations. We also calculated the Debye temperature, revealing that oxygen impurity decreases its magnitude.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	93616
citation_title	Elastic constants of GaN grown by the oxide vapor phase epitaxy method
citation_author	Fukuda, Hiroki
	Nagakubo, Akira
	Usami, Shigeyoshi
	Imanishi, Masayuki
	Mori, Yusuke
	Ogi, Hirotsugu
citation_publisher	Institute of Physics
citation_language	English
citation_date	2024-01-01
citation_journal_title	Applied Physics Express
citation_volume	17
citation_issue	1
citation_firstpage	016501
citation_doi	https://doi.org/10.35848/1882-0786/ad0ba2
citation_public_url	https://hdl.handle.net/11094/93616

Elastic constants of GaN grown by the oxide vapor phase epitaxy method

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