Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate

Tatsumi, Hiroaki; Moon, Seongjae; Takahashi, Makoto; Kozawa, Takahiro; Tsushima, Eiki; Nishikawa, Hiroshi

doi:https://doi.org/10.1016/j.matdes.2024.112637

Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate

Tatsumi, Hiroaki; Moon, Seongjae; Takahashi, Makoto et al.

Materials and Design, 2024, 238, 112637

Number of Access:813（2025-07-16 16:28 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/94583

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Title	Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate
Creator	NRID 1000000961757 1000000961757 ORCID 0000-0002-0561-3100 0000-0002-0561-3100 researchmap permalink hiroaki_tatsumi hiroaki_tatsumi Scopus Author ID 54914528200 54914528200 CreatorName Tatsumi, Hiroaki
	CreatorName Moon, Seongjae
	NRID 1000010294133 1000010294133 researchmap permalink AB_MTakahashi AB_MTakahashi Scopus Author ID 55701142600 55701142600 CreatorName Takahashi, Makoto
	NRID 1000040734158 1000040734158 ORCID 0000-0002-8793-3369 0000-0002-8793-3369 researchmap permalink thkw thkw Scopus Author ID 56429926400 56429926400 CreatorName Kozawa, Takahiro
	CreatorName Tsushima, Eiki
	NRID 1000090346180 1000090346180 ORCID 0000-0002-4363-9520 0000-0002-4363-9520 researchmap permalink read0191232 read0191232 Scopus Author ID 57219209494 57219209494 CreatorName Nishikawa, Hiroshi
Subject	Bonding interface
	Ceramic insulating circuit substrate
	Cu–Si3N4 bonding
	Silicon nitride
Description	Tatsumi H., Moon S., Takahashi M., et al. Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate. Materials and Design 238, 112637 (2024); https://doi.org/10.1016/j.matdes.2024.112637.
Abstract	The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing filler metals. This study introduces a quasi-direct Cu–Si3N4 bonding technique using a Ti/Al bilayer active metal deposition at the bonding interface. A sputtered Ti/Al bilayer was formed on the Si3N4 surface, then heated and pressurized the sputtered Si3N4 substrate with Cu sheets in vacuum to bond each other without voids or delamination. The Ti/Al layers reacted with Si3N4 and Cu, forming a 300 nm intermediate layer. TEM observations show this layer contains segregated Ti–N and Cu–Al phases, with a good lattice match to Si3N4 and Cu–Al. Temperature-cycling tests on the Cu/Si3N4/Cu substrate revealed delamination caused by increased tensile stress at the periphery of the bonding area due to asymmetrical Cu patterns. This novel quasi-direct Cu–Si3N4 bonding technique addresses issues of electrochemical migration and void formation seen in AMB substrates, offering a reliable bonding interface for power electronic substrates.
Publisher	Elsevier Ltd
Source Title	Materials and Design
Volume (Issue)	238
Page	112637
Date of Issued	2024-02-01
Language	English
Handle URL	https://hdl.handle.net/11094/94583
PISSN	02641275
eISSN	18734197
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1016/j.matdes.2024.112637
Access Rights	open access
CopyRight	This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Materials and Design. 2024, 238, p. 112637
DC.title	Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate
DC.creator	Tatsumi, Hiroaki
	Moon, Seongjae
	Takahashi, Makoto
	Kozawa, Takahiro
	Tsushima, Eiki
	Nishikawa, Hiroshi
DC.publisher	Elsevier Ltd
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-02-01
DC.identifier	https://doi.org/10.1016/j.matdes.2024.112637
DC.subject	Bonding interface
	Ceramic insulating circuit substrate
	Cu–Si3N4 bonding
	Silicon nitride
DC.description	Tatsumi H., Moon S., Takahashi M., et al. Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate. Materials and Design 238, 112637 (2024); https://doi.org/10.1016/j.matdes.2024.112637.
DCTERMS.abstract	The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing filler metals. This study introduces a quasi-direct Cu–Si3N4 bonding technique using a Ti/Al bilayer active metal deposition at the bonding interface. A sputtered Ti/Al bilayer was formed on the Si3N4 surface, then heated and pressurized the sputtered Si3N4 substrate with Cu sheets in vacuum to bond each other without voids or delamination. The Ti/Al layers reacted with Si3N4 and Cu, forming a 300 nm intermediate layer. TEM observations show this layer contains segregated Ti–N and Cu–Al phases, with a good lattice match to Si3N4 and Cu–Al. Temperature-cycling tests on the Cu/Si3N4/Cu substrate revealed delamination caused by increased tensile stress at the periphery of the bonding area due to asymmetrical Cu patterns. This novel quasi-direct Cu–Si3N4 bonding technique addresses issues of electrochemical migration and void formation seen in AMB substrates, offering a reliable bonding interface for power electronic substrates.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	94583
citation_title	Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate
citation_author	Tatsumi, Hiroaki
	Moon, Seongjae
	Takahashi, Makoto
	Kozawa, Takahiro
	Tsushima, Eiki
	Nishikawa, Hiroshi
citation_publisher	Elsevier Ltd
citation_language	English
citation_date	2024-02-01
citation_journal_title	Materials and Design
citation_volume	238
citation_firstpage	112637
citation_doi	https://doi.org/10.1016/j.matdes.2024.112637
citation_public_url	https://hdl.handle.net/11094/94583

Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate

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