Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

Sano, K.; Fujikura, H.; Konno, T.; Kaneki, S.; Ichikawa, S.; Kojima, K.

doi:https://doi.org/10.1063/5.0207339

Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

Sano, K.; Fujikura, H.; Konno, T. et al.

Applied Physics Letters, 2024, 124, 231101

Number of Access:526（2025-07-29 08:56 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/97212

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Title	Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals
Creator	CreatorName Sano, K.
	NRID 1000070271640 1000070271640 CreatorName Fujikura, H.
	CreatorName Konno, T.
	CreatorName Kaneki, S.
	NRID 1000050803673 1000050803673 ORCID 0000-0001-7015-3748 0000-0001-7015-3748 researchmap permalink ichikawa_10 ichikawa_10 Scopus Author ID 55441417500 55441417500 CreatorName Ichikawa, S.
	NRID 1000030534250 1000030534250 ORCID 0000-0003-0128-1978 0000-0003-0128-1978 researchmap permalink kkojima kkojima CreatorName Kojima, K.
Description	Sano K., Fujikura H., Konno T., et al. Applied Physics Letters 124, 231101 (2024) https://doi.org/10.1063/5.0207339.
Abstract	The external quantum efficiency (EQE) and internal quantum efficiency (IQE) of radiation are quantified by omnidirectional photoluminescence measurements using an integrating sphere for two types of GaN crystals with different carbon concentrations ([C] = 1 × 10 ¹⁴ cm ⁻³ , 2 × 10 ¹⁵ cm ⁻³ ). In the sample with lower [C], when the excitation density is 140 W cm ⁻² , the EQE and IQE for near-band-edge (NBE) emission are 0.787% and 21.7%, respectively. The relationship between [C] and the IQE for NBE emission indicates that carbon impurities work as effective nonradiative recombination centers (NRCs) in n-type GaN, and major NRCs switch from carbon impurities to intrinsic NRCs, such as vacancies, when [C] falls below 3.5 × 10 ¹⁴ cm ⁻³.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	124
Page	231101
Date of Issued	2024-06-03
Language	English
Handle URL	https://hdl.handle.net/11094/97212
PISSN	00036951
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/5.0207339
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Sano K., Fujikura H., Konno T., et al. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals. Applied Physics Letters 124, 231101 (2024) and may be found at https://doi.org/10.1063/5.0207339.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCTERMS.bibliographicCitation	Applied Physics Letters. 2024, 124, p. 231101
DC.title	Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals
DC.creator	Sano, K.
	Fujikura, H.
	Konno, T.
	Kaneki, S.
	Ichikawa, S.
	Kojima, K.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-06-03
DC.identifier	https://doi.org/10.1063/5.0207339
DC.description	Sano K., Fujikura H., Konno T., et al. Applied Physics Letters 124, 231101 (2024) https://doi.org/10.1063/5.0207339.
DCTERMS.abstract	The external quantum efficiency (EQE) and internal quantum efficiency (IQE) of radiation are quantified by omnidirectional photoluminescence measurements using an integrating sphere for two types of GaN crystals with different carbon concentrations ([C] = 1 × 10 ¹⁴ cm ⁻³ , 2 × 10 ¹⁵ cm ⁻³ ). In the sample with lower [C], when the excitation density is 140 W cm ⁻² , the EQE and IQE for near-band-edge (NBE) emission are 0.787% and 21.7%, respectively. The relationship between [C] and the IQE for NBE emission indicates that carbon impurities work as effective nonradiative recombination centers (NRCs) in n-type GaN, and major NRCs switch from carbon impurities to intrinsic NRCs, such as vacancies, when [C] falls below 3.5 × 10 ¹⁴ cm ⁻³.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Sano K., Fujikura H., Konno T., et al. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals. Applied Physics Letters 124, 231101 (2024) and may be found at https://doi.org/10.1063/5.0207339.
DC.format	97212
citation_title	Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals
citation_author	Sano, K.
	Fujikura, H.
	Konno, T.
	Kaneki, S.
	Ichikawa, S.
	Kojima, K.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2024-06-03
citation_journal_title	Applied Physics Letters
citation_volume	124
citation_firstpage	231101
citation_doi	https://doi.org/10.1063/5.0207339
citation_public_url	https://hdl.handle.net/11094/97212

Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

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