Epitaxial growth of Ca(Ge₁₋ₓSnₓ)₂ with group IV 2D layers on Si substrate　

Yoshizaki, Takashi; Terada, Tsukasa; Uematsu, Yuto et al.

Applied Physics Express, 2024, 17(5), 055501

Number of Access:566（2025-08-28 23:57 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/97261

Link to primary information 

File Format Terms of use Size Views Date.Available Description information
ApplPhysExpress_17_5_055501 pdf None 1.06 MB 33 2024.08.01  
Creative Commons : Attribution

Item Information

Output File Export EndNote Basic Export Mendeley

Title
Epitaxial growth of Ca(Ge₁₋ₓSnₓ)₂ with group IV 2D layers on Si substrate　
Creator
CreatorName
Yoshizaki, Takashi
NRID
1000000963662 1000000963662
CreatorName
Terada, Tsukasa
CreatorName
Uematsu, Yuto
NRID
1000050837359 1000050837359
ORCID
0000-0002-8662-875X 0000-0002-8662-875X
researchmap permalink
t-ishibe t-ishibe
Scopus Author ID
55925365500 55925365500
CreatorName
Ishibe, Takafumi
NRID
1000060345105 1000060345105
researchmap permalink
research_nakamura research_nakamura
Scopus Author ID
55615390400 55615390400
ORCID
0000-0002-5387-1630 0000-0002-5387-1630
CreatorName
Nakamura, Yoshiaki
Description
Yoshizaki T., Terada T., Uematsu Y., et al. Epitaxial growth of Ca(Ge₁₋ₓSnₓ)₂ with group IV 2D layers on Si substrate. Applied Physics Express 17, 055501 (2024); https://doi.org/10.35848/1882-0786/ad3ee2.
Abstract
Two-dimensional (2D) material is drawing considerable attention as a promising thermoelectric material. This study establishes the formation method of renewed Ca-intercalated group IV 2D materials, Ca(Ge₁₋ₓSnₓ)₂ crystals including germanene-based 2D layers. The solid phase epitaxy allows us to form epitaxial Ca(Ge₁₋ₓSnₓ)₂ on Si. Atomic force microscopy reveals that the Ca(Ge₁₋ₓSnₓ)₂ has island structures. X-ray diffraction proved the epitaxial growth of the Ca(Ge₁₋ₓSnₓ)₂ island structures and the increase of the c-axis lattice constant with Sn content increase. The formation of this renewed intermetallic compound including group IV 2D layer opens an avenue for high performance thermoelectric generator/Si.
Publisher
Institute of Physics
Source Title
Applied Physics Express
Volume (Issue)
17(5)
Page
055501
Date of Issued
2024-05-07
Language
English
Handle URL
https://hdl.handle.net/11094/97261
PISSN
18820778
eISSN
18820786
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.35848/1882-0786/ad3ee2
Access Rights
open access
CopyRight
This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article