Maximum usable thickness revisited: Imaging dislocations in Si by modern high-voltage scanning transmission electron microscopy

Sato, Kazuhisa; Yamashita, Yuki; Yasuda, Hidehiro et al.

Japanese Journal of Applied Physics, 2017, 56(10), 100304

Number of Access:252（2025-09-30 09:21 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/97376

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Title
Maximum usable thickness revisited: Imaging dislocations in Si by modern high-voltage scanning transmission electron microscopy
Creator
NRID
1000070314424 1000070314424
ORCID
0000-0001-9078-2541 0000-0001-9078-2541
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read0158304 read0158304
Scopus Author ID
55552977400 55552977400
CreatorName
Sato, Kazuhisa
CreatorName
Yamashita, Yuki
NRID
1000060210259 1000060210259
CreatorName
Yasuda, Hidehiro
NRID
1000010024366 1000010024366
researchmap permalink
read0014257 read0014257
CreatorName
Mori, Hirotaro
Description
This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/JJAP.56.100304.
Abstract
We have quantitatively evaluated the usable thickness of specimens in scanning transmission electron microscopy (STEM) at 1MV using a wedgeshaped Si(110) single crystal including artificially introduced high-density dislocations. The width of dislocation images was employed as a criterion for the quantitative evaluation of usable thickness. Superior usable thickness in STEM than in TEM was found; the obtained results were 14.7μm for STEM and 5.8μm for TEM. In particular, in STEM, dislocations can be observed as thin lines with 10-15nm width in the thickness range up to 10 μm. The latest high-voltage STEM is useful for imaging crystal defects in thick semiconductors.
Publisher
The Japan Society of Applied Physics
Source Title
Japanese Journal of Applied Physics
Volume (Issue)
56(10)
Page
100304
Date of Issued
2017-10-01
Language
English
Handle URL
https://hdl.handle.net/11094/97376
PISSN
00214922
eISSN
13474065
Relation.isVersionOf
DOI (Publisher Version)
https://doi.org/10.7567/JJAP.56.100304
Access Rights
open access
CopyRight
© 2017 The Japan Society of Applied Physics. This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to.
oaire:version
Accepted Manuscript
Category
学術雑誌論文 Journal Article