Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches

Imanishi, Masayuki; Usami, Shigeyoshi; Murakami, Kosuke; Okumura, Kanako; Nakamura, Kosuke; Kakinouchi, Keisuke; Otoki, Yohei; Yamashita, Tomio; Tsurumi, Naohiro; Tamura, Satoshi; Ohno, Hiroshi; Okayama, Yoshio; Fujimori, Taku; Nagai, Seiji; Moriyama, Miki; Mori, Yusuke

doi:https://doi.org/10.1002/pssr.202400106

Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches

Imanishi, Masayuki; Usami, Shigeyoshi; Murakami, Kosuke et al.

Physica Status Solidi - Rapid Research Letters, 2024, 18(11), 2400106

Number of Access:1,773（2025-11-18 03:26 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/97615

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Title	Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches
Creator	NRID 1000000795487 1000000795487 researchmap permalink Na-flux Na-flux Scopus Author ID 55361211900 55361211900 ORCID 0000-0001-9395-1750 0000-0001-9395-1750 CreatorName Imanishi, Masayuki
	NRID 1000030897947 1000030897947 researchmap permalink s_usami s_usami Scopus Author ID 56770778200 56770778200 ORCID 0000-0002-9710-1718 0000-0002-9710-1718 CreatorName Usami, Shigeyoshi
	CreatorName Murakami, Kosuke
	CreatorName Okumura, Kanako
	CreatorName Nakamura, Kosuke
	CreatorName Kakinouchi, Keisuke
	CreatorName Otoki, Yohei
	CreatorName Yamashita, Tomio
	CreatorName Tsurumi, Naohiro
	CreatorName Tamura, Satoshi
	CreatorName Ohno, Hiroshi
	CreatorName Okayama, Yoshio
	CreatorName Fujimori, Taku
	CreatorName Nagai, Seiji
	CreatorName Moriyama, Miki
	NRID 1000090252618 1000090252618 ORCID 0000-0003-2952-7458 0000-0003-2952-7458 researchmap permalink mori_yusuke mori_yusuke Scopus Author ID 7404197134 7404197134 CreatorName Mori, Yusuke
Subject	6 inch
	GaN
	hydride vapor phase epitaxy
	Na flux
	on-resistance
	p–n junction diode
	vertical transistor
Description	Imanishi M., Usami S., Murakami K., et al. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches. Physica Status Solidi - Rapid Research Letters, (2024); https://doi.org/10.1002/pssr.202400106.
Abstract	The Na-flux method is expected to be a key GaN growth technique for obtaining ideal bulk GaN crystals. Herein, the structural quality of the latest GaN crystals grown using the Na-flux method and, for the first time, the characteristics of a vertical transistor fabricated on a GaN substrate grown using this method are discussed. Vertical transistors exhibit normally off operation with a gate voltage threshold exceeding 2 V and a maximum drain current of 3.3 A during the on-state operation. Additionally, it demonstrates a breakdown voltage exceeding 600 V and a low leakage current during off-state operation. It is also described that the variation in the on-resistance can be minimized using GaN substrates with minimal off-angle variations. This is crucial for achieving the large-current chips required for future demonstration of actual devices. In addition, the reverse I–V characteristics of the parasitic p–n junction diode (PND) structures indicate a reduction in the number of devices with a significant leakage current compared to commercially available GaN substrates. Finally, a circular GaN substrate with a diameter of 161 mm, surpassing 6 inches, grown using the Na-flux method is demonstrated, making it the largest GaN substrate aside from those produced through the tiling technique.
Publisher	John Wiley and Sons Inc
Source Title	Physica Status Solidi - Rapid Research Letters
Volume (Issue)	18(11)
Page	2400106
Date of Issued	2024-06-26
Language	English
Handle URL	https://hdl.handle.net/11094/97615
PISSN	18626254
eISSN	18626270
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1002/pssr.202400106
Access Rights	open access
CopyRight	This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCTERMS.bibliographicCitation	Physica Status Solidi - Rapid Research Letters. 2024, 18(11), p. 2400106
DC.title	Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches
DC.creator	Imanishi, Masayuki
	Usami, Shigeyoshi
	Murakami, Kosuke
	Okumura, Kanako
	Nakamura, Kosuke
	Kakinouchi, Keisuke
	Otoki, Yohei
	Yamashita, Tomio
	Tsurumi, Naohiro
	Tamura, Satoshi
	Ohno, Hiroshi
	Okayama, Yoshio
	Fujimori, Taku
	Nagai, Seiji
	Moriyama, Miki
	Mori, Yusuke
DC.publisher	John Wiley and Sons Inc
DC.language' scheme='DCTERMS.RFC1766	English
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-06-26
DC.identifier	https://doi.org/10.1002/pssr.202400106
DC.subject	6 inch
	GaN
	hydride vapor phase epitaxy
	Na flux
	on-resistance
	p–n junction diode
	vertical transistor
DC.description	Imanishi M., Usami S., Murakami K., et al. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches. Physica Status Solidi - Rapid Research Letters, (2024); https://doi.org/10.1002/pssr.202400106.
DCTERMS.abstract	The Na-flux method is expected to be a key GaN growth technique for obtaining ideal bulk GaN crystals. Herein, the structural quality of the latest GaN crystals grown using the Na-flux method and, for the first time, the characteristics of a vertical transistor fabricated on a GaN substrate grown using this method are discussed. Vertical transistors exhibit normally off operation with a gate voltage threshold exceeding 2 V and a maximum drain current of 3.3 A during the on-state operation. Additionally, it demonstrates a breakdown voltage exceeding 600 V and a low leakage current during off-state operation. It is also described that the variation in the on-resistance can be minimized using GaN substrates with minimal off-angle variations. This is crucial for achieving the large-current chips required for future demonstration of actual devices. In addition, the reverse I–V characteristics of the parasitic p–n junction diode (PND) structures indicate a reduction in the number of devices with a significant leakage current compared to commercially available GaN substrates. Finally, a circular GaN substrate with a diameter of 161 mm, surpassing 6 inches, grown using the Na-flux method is demonstrated, making it the largest GaN substrate aside from those produced through the tiling technique.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	97615
citation_title	Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches
citation_author	Imanishi, Masayuki
	Usami, Shigeyoshi
	Murakami, Kosuke
	Okumura, Kanako
	Nakamura, Kosuke
	Kakinouchi, Keisuke
	Otoki, Yohei
	Yamashita, Tomio
	Tsurumi, Naohiro
	Tamura, Satoshi
	Ohno, Hiroshi
	Okayama, Yoshio
	Fujimori, Taku
	Nagai, Seiji
	Moriyama, Miki
	Mori, Yusuke
citation_publisher	John Wiley and Sons Inc
citation_language	English
citation_date	2024-06-26
citation_journal_title	Physica Status Solidi - Rapid Research Letters
citation_volume	18
citation_issue	11
citation_firstpage	2400106
citation_doi	https://doi.org/10.1002/pssr.202400106
citation_public_url	https://hdl.handle.net/11094/97615

Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches

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