Effects of strain-tunable valleys on charge transport in bismuth

Hosoi, Suguru; Tachibana, Fumu; Sakaguchi, Mai; Ishida, Kentaro; Shimozawa, Masaaki; Izawa, Koichi; Fuseya, Yuki; Kinoshita, Yuto; Tokunaga, Masashi

doi:https://doi.org/10.1103/PhysRevResearch.6.033096

Effects of strain-tunable valleys on charge transport in bismuth

Hosoi, Suguru; Tachibana, Fumu; Sakaguchi, Mai et al.

Physical Review Research, 2024, 6(3), 033096

Number of Access:30（2025-04-24 13:53 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/97841

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Title	Effects of strain-tunable valleys on charge transport in bismuth
Creator	NRID 1000000824111 1000000824111 researchmap permalink s_hosoi s_hosoi Scopus Author ID 57190272185 57190272185 CreatorName Hosoi, Suguru
	CreatorName Tachibana, Fumu
	CreatorName Sakaguchi, Mai
	CreatorName Ishida, Kentaro
	NRID 1000040736162 1000040736162 Scopus Author ID 26322810800 26322810800 CreatorName Shimozawa, Masaaki
	NRID 1000090302637 1000090302637 researchmap permalink koichi-izawa koichi-izawa Scopus Author ID 7103063750 7103063750 CreatorName Izawa, Koichi
	NRID 1000000377954 1000000377954 CreatorName Fuseya, Yuki
	NRID 1000090825340 1000090825340 CreatorName Kinoshita, Yuto
	NRID 1000050300885 1000050300885 CreatorName Tokunaga, Masashi
Description	Hosoi S., Tachibana F., Sakaguchi M., et al. Effects of strain-tunable valleys on charge transport in bismuth. Physical Review Research 6, 033096 (2024); https://doi.org/10.1103/PhysRevResearch.6.033096.
Abstract	The manipulation of the valley degree of freedom can boost the technological development of novel functional devices based on valleytronics. The current mainstream platform for valleytronics is to produce a monolayer with inversion asymmetry, in which the strain-band engineering through the substrates can serve to improve the performance of valley-based devices. However, pinpointing the effective role of strain is inevitable for the precise design of the desired valley structure. Here, we demonstrate the charge transport under continuously controllable external strain for bulk bismuth crystals with three equivalent electron valleys and one hole valley. The strain response of resistance, namely elastoresistance, exhibits evolutions in both antisymmetric and symmetric channels with decreasing temperature. The elastoresistance behaviors mainly reflect the significant changes in valley density depending on the symmetry of induced strain, evidenced by our strain-dependent quantum oscillation measurements and first-principles band calculations under strain. These facts suggest the successful tuning and evaluation of the valley populations through strain-dependent charge valley transport.
Publisher	American Physical Society
Source Title	Physical Review Research
Volume (Issue)	6(3)
Page	033096
Date of Issued	2024-07-23
Language	English
Handle URL	https://hdl.handle.net/11094/97841
PISSN	26431564
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1103/PhysRevResearch.6.033096
Access Rights	open access
CopyRight	This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCTERMS.bibliographicCitation	Physical Review Research. 2024, 6(3), p. 033096
DC.title	Effects of strain-tunable valleys on charge transport in bismuth
DC.creator	Hosoi, Suguru
	Tachibana, Fumu
	Sakaguchi, Mai
	Ishida, Kentaro
	Shimozawa, Masaaki
	Izawa, Koichi
	Fuseya, Yuki
	Kinoshita, Yuto
	Tokunaga, Masashi
DC.publisher	American Physical Society
DC.language' scheme='DCTERMS.RFC1766	English
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-07-23
DC.identifier	https://doi.org/10.1103/PhysRevResearch.6.033096
DC.description	Hosoi S., Tachibana F., Sakaguchi M., et al. Effects of strain-tunable valleys on charge transport in bismuth. Physical Review Research 6, 033096 (2024); https://doi.org/10.1103/PhysRevResearch.6.033096.
DCTERMS.abstract	The manipulation of the valley degree of freedom can boost the technological development of novel functional devices based on valleytronics. The current mainstream platform for valleytronics is to produce a monolayer with inversion asymmetry, in which the strain-band engineering through the substrates can serve to improve the performance of valley-based devices. However, pinpointing the effective role of strain is inevitable for the precise design of the desired valley structure. Here, we demonstrate the charge transport under continuously controllable external strain for bulk bismuth crystals with three equivalent electron valleys and one hole valley. The strain response of resistance, namely elastoresistance, exhibits evolutions in both antisymmetric and symmetric channels with decreasing temperature. The elastoresistance behaviors mainly reflect the significant changes in valley density depending on the symmetry of induced strain, evidenced by our strain-dependent quantum oscillation measurements and first-principles band calculations under strain. These facts suggest the successful tuning and evaluation of the valley populations through strain-dependent charge valley transport.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	97841
citation_title	Effects of strain-tunable valleys on charge transport in bismuth
citation_author	Hosoi, Suguru
	Tachibana, Fumu
	Sakaguchi, Mai
	Ishida, Kentaro
	Shimozawa, Masaaki
	Izawa, Koichi
	Fuseya, Yuki
	Kinoshita, Yuto
	Tokunaga, Masashi
citation_publisher	American Physical Society
citation_language	English
citation_date	2024-07-23
citation_journal_title	Physical Review Research
citation_volume	6
citation_issue	3
citation_firstpage	033096
citation_doi	https://doi.org/10.1103/PhysRevResearch.6.033096
citation_public_url	https://hdl.handle.net/11094/97841

Effects of strain-tunable valleys on charge transport in bismuth

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