Large Area Epitaxial Lateral Overgrowth of Semipolar (1(Formula Presented)01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography

Takeda, Naofumi; Uemukai, Masahiro; Tanikawa, Tomoyuki et al.

Physica Status Solidi (B) Basic Research, 2024, 261(11), 2400071

Number of Access:546（2025-08-14 15:05 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/98122

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Title
Large Area Epitaxial Lateral Overgrowth of Semipolar (1(Formula Presented)01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography
Creator
CreatorName
Takeda, Naofumi
NRID
1000080362672 1000080362672
researchmap permalink
read0191222 read0191222
Scopus Author ID
6701849400 6701849400
CreatorName
Uemukai, Masahiro
NRID
1000090633537 1000090633537
ORCID
0000-0003-0148-9701 0000-0003-0148-9701
researchmap permalink
T-Tanikawa T-Tanikawa
Scopus Author ID
25823529800 25823529800
CreatorName
Tanikawa, Tomoyuki
NRID
1000040343115 1000040343115
ORCID
0000-0002-7897-3393 0000-0002-7897-3393
researchmap permalink
katayamaryuji katayamaryuji
Scopus Author ID
7004395093 7004395093
CreatorName
Katayama, Ryuji
Subject
GaN
metal–organic vapor phase epitaxy
semipolar
Si
Description
Takeda N., Uemukai M., Tanikawa T., et al. Large Area Epitaxial Lateral Overgrowth of Semipolar (1(Formula Presented)01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography. Physica Status Solidi (B) Basic Research , (2024); https://doi.org/10.1002/pssb.202400071.
Abstract
Selective area growth and epitaxial lateral overgrowth (ELOG) of semipolar (1 (Formula presented.) 01) GaN stripes are demonstrated on a trench patterned vicinal (001) Si substrate fabricated by a maskless photolithography-based process. High precision alignment enables selective mask formation to one sidewall of the trench. Selective area growth of GaN stripes is conducted from the (111) plane sidewall of Si, and ELOG region reaches ≈13 μm. The ELOG GaN crystal is dislocation-free at most areas. The semipolar GaN stripes with atomically flat surface morphology are uniformly obtained. Light-emitting diode structures with InGaN/GaN multiple quantum wells are grown on the 13-μm ELOG (1 (Formula presented.) 01) GaN stripes and a single photoluminescence emission peaked at 485 nm is obtained, suggesting potential for the cost-effective semipolar micro light-emitting diode fabrication technologies.
Publisher
John Wiley and Sons Inc
Source Title
Physica Status Solidi (B) Basic Research
Volume (Issue)
261(11)
Page
2400071
Date of Issued
2024-06-21
Language
English
Handle URL
https://hdl.handle.net/11094/98122
PISSN
03701972
eISSN
15213951
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1002/pssb.202400071
Access Rights
open access
CopyRight
This article is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article