Metalorganic Vapor-Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi-Phase-Matched Wavelength Conversion Device

Ikeda, Kazuhisa; Malik, Shahzeb; Uemukai, Masahiro et al.

Physica Status Solidi (B) Basic Research, 2024, 261(11), 2400161

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Identifier to cite or link to this item: https://hdl.handle.net/11094/98298

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Title
Metalorganic Vapor-Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi-Phase-Matched Wavelength Conversion Device
Creator
CreatorName
Ikeda, Kazuhisa
CreatorName
Malik, Shahzeb
NRID
1000080362672 1000080362672
researchmap permalink
read0191222 read0191222
Scopus Author ID
6701849400 6701849400
CreatorName
Uemukai, Masahiro
NRID
1000090633537 1000090633537
ORCID
0000-0003-0148-9701 0000-0003-0148-9701
researchmap permalink
T-Tanikawa T-Tanikawa
Scopus Author ID
25823529800 25823529800
CreatorName
Tanikawa, Tomoyuki
NRID
1000040343115 1000040343115
ORCID
0000-0002-7897-3393 0000-0002-7897-3393
researchmap permalink
katayamaryuji katayamaryuji
Scopus Author ID
7004395093 7004395093
CreatorName
Katayama, Ryuji
Subject
GaN
metalorganic vapor-phase epitaxy
photon pair generation
polarity
Description
Ikeda K., Malik S., Uemukai M., et al. Metalorganic Vapor-Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi-Phase-Matched Wavelength Conversion Device. Physica Status Solidi (B) Basic Research, (2024); https://doi.org/10.1002/pssb.202400161.
Abstract
Photon-pair generation based on optical parametric down-conversion has attracted for the application as a light source for quantum information. Highly efficient wavelength-conversion devices require a polarity-inversion structure when using nitride semiconductors. A transverse quasi-phase-matching (QPM) polarity-inverted GaN bilayer channel waveguide device is suitable for efficient wavelength conversion. This study designed a cross-section device to satisfy the modal dispersion phase-matching condition between the TM₀₂ mode pump light and the TM₀₀ mode signal/idler light. Moreover, an AlN oxidation interlayer fabricates the Ga-polar/N-polar (+c/−c) GaN layers via metalorganic vapor-phase epitaxy (MOVPE). A 145 nm thick film layer with a macro-step-free surface is grown by optimizing the −c-GaN growth conditions and reducing the substrate off-angle to 0.2°. Next, the AlN layer is oxidized in an electric furnace and MOVPE is used to regrow a 1500 nm thick +c-GaN layer. A macrosteps-free surface can be achieved by reducing the off-angle to 0.2° and optimizing the −c-GaN growth conditions to avoid hillock formation. These results pave the way for improving the efficiency of GaN transverse QPM wavelength-conversion devices.
Publisher
John Wiley and Sons Inc
Source Title
Physica Status Solidi (B) Basic Research
Volume (Issue)
261(11)
Page
2400161
Date of Issued
2024-09-09
Language
English
Handle URL
https://hdl.handle.net/11094/98298
PISSN
03701972
eISSN
15213951
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1002/pssb.202400161
Access Rights
open access
CopyRight
This article is licensed under a Creative Commons Attribution 4.0 International License.
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Version of Record
Category
学術雑誌論文 Journal Article