Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si

Yamada, Atsuya; Yamada, Michihiro; Kusumoto, Shuhei; do Nascimento, Julio A.; Murrill, Connor; Yamada, Shinya; Sawano, Kentarou; Lazarov, Vlado K.; Hamaya, Kohei

doi:https://doi.org/10.1016/j.mssp.2024.108140

Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si　　

Yamada, Atsuya; Yamada, Michihiro; Kusumoto, Shuhei et al.

Materials Science in Semiconductor Processing, 2024, 173, 108140

Number of Access:1,093（2025-07-20 17:17 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/98510

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Title	Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si
Creator	CreatorName Yamada, Atsuya
	NRID 1000050778529 1000050778529 ORCID 0000-0002-9623-9926 0000-0002-9623-9926 researchmap permalink YamadaMichihiro YamadaMichihiro Scopus Author ID 57212378385 57212378385 CreatorName Yamada, Michihiro
	CreatorName Kusumoto, Shuhei
	CreatorName do Nascimento, Julio A.
	CreatorName Murrill, Connor
	NRID 1000030725049 1000030725049 ORCID 0000-0001-6340-9151 0000-0001-6340-9151 researchmap permalink shinyayamada shinyayamada Scopus Author ID 56140528400 56140528400 CreatorName Yamada, Shinya
	NRID 1000090409376 1000090409376 CreatorName Sawano, Kentarou
	CreatorName Lazarov, Vlado K.
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 CreatorName Hamaya, Kohei
Subject	Co₂MnSi
	Ge
	Spintronics
	Vertical spin-valve device
Description	Yamada A., Yamada M., Kusumoto S., et al. Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si. Materials Science in Semiconductor Processing 173, 108140 (2024); https://doi.org/10.1016/j.mssp.2024.108140.
Abstract	We explore epitaxial growth of Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si, where the Co₂MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si.
Publisher	Elsevier Ltd
Source Title	Materials Science in Semiconductor Processing
Volume (Issue)	173
Page	108140
Date of Issued	2024-04-01
Language	English
Handle URL	https://hdl.handle.net/11094/98510
PISSN	13698001
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1016/j.mssp.2024.108140
Access Rights	embargoed access
CopyRight	© 2024. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/
CopyRight	The full-text file will be made open to the public on 1 April 2026 in accordance with the publisher's policy.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCTERMS.bibliographicCitation	Materials Science in Semiconductor Processing. 2024, 173, p. 108140
DC.title	Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si
DC.creator	Yamada, Atsuya
	Yamada, Michihiro
	Kusumoto, Shuhei
	do Nascimento, Julio A.
	Murrill, Connor
	Yamada, Shinya
	Sawano, Kentarou
	Lazarov, Vlado K.
	Hamaya, Kohei
DC.publisher	Elsevier Ltd
DC.language' scheme='DCTERMS.RFC1766	English
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-04-01
DC.identifier	https://doi.org/10.1016/j.mssp.2024.108140
DC.subject	Co₂MnSi
	Ge
	Spintronics
	Vertical spin-valve device
DC.description	Yamada A., Yamada M., Kusumoto S., et al. Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si. Materials Science in Semiconductor Processing 173, 108140 (2024); https://doi.org/10.1016/j.mssp.2024.108140.
DCTERMS.abstract	We explore epitaxial growth of Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si, where the Co₂MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si.
DC.rights	© 2024. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/
DC.rights	The full-text file will be made open to the public on 1 April 2026 in accordance with the publisher's policy.
DC.format	98510
citation_title	Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si
citation_author	Yamada, Atsuya
	Yamada, Michihiro
	Kusumoto, Shuhei
	do Nascimento, Julio A.
	Murrill, Connor
	Yamada, Shinya
	Sawano, Kentarou
	Lazarov, Vlado K.
	Hamaya, Kohei
citation_publisher	Elsevier Ltd
citation_language	English
citation_date	2024-04-01
citation_journal_title	Materials Science in Semiconductor Processing
citation_volume	173
citation_firstpage	108140
citation_doi	https://doi.org/10.1016/j.mssp.2024.108140
citation_public_url	https://hdl.handle.net/11094/98510

Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si

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Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si　　