Room-temperature spin transport through band-to-band tunneling at semiconductor p-n junctions

Oki, K.; Ueda, S.; Usami, T.; Fujii, S.; Kikuoka, S.; Yamamoto, K.; Sawano, K.; Hamaya, K.

doi:https://doi.org/10.1103/physrevapplied.23.l051005

Room-temperature spin transport through band-to-band tunneling at semiconductor p-n junctions

Oki, K.; Ueda, S.; Usami, T. et al.

Physical Review Applied, 2025, 23(5), L051005

Number of Access:131（2025-08-14 04:39 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/101981

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Title	Room-temperature spin transport through band-to-band tunneling at semiconductor p-n junctions
Creator	CreatorName Oki, K.
	CreatorName Ueda, S.
	NRID 1000030880273 1000030880273 ORCID 0000-0001-9478-7331 0000-0001-9478-7331 researchmap permalink TakamasaUsami TakamasaUsami Scopus Author ID 57189692364 57189692364 CreatorName Usami, T.
	CreatorName Fujii, S.
	CreatorName Kikuoka, S.
	NRID 1000020706387 1000020706387 CreatorName Yamamoto, K.
	NRID 1000090409376 1000090409376 CreatorName Sawano, K.
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 CreatorName Hamaya, K.
Description	Oki K., Ueda S., Usami T., et al. Room-temperature spin transport through band-to-band tunneling at semiconductor p-n junctions. Physical Review Applied 23, L051005 (2025); https://doi.org/10.1103/physrevapplied.23.l051005.
Abstract	We report electrical spin injection, transport, and detection at room temperature through band-to-band tunneling (BTBT) at semiconductor p-n junctions. Using germanium-based lateral spin-valve devices with p-n-junction electrodes, we experimentally observe pure spin-current transport through BTBT at room temperature. Asymmetric bias-current dependence of the spin signals is evidently found, which originates from the spin injection via BTBT through p-n junctions or the spin extraction via localized states near p-n junctions. Notably, even for the use of a thin p-type semiconductor layer at the spin injector and detector, we find clear spin-transport properties at room temperature. This study will open a path for the room-temperature operation of a spin-based tunnel field-effect transistor with a p-n junction.
Publisher	American Physical Society
Source Title	Physical Review Applied
Volume (Issue)	23(5)
Page	L051005
Date of Issued	2025-05-22
Language	English
Handle URL	https://hdl.handle.net/11094/101981
eISSN	23317019
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1103/physrevapplied.23.l051005
Access Rights	open access
CopyRight	Copyright 2025 by the American Physical Society
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Physical Review Applied. 2025, 23(5), p. L051005
DC.title	Room-temperature spin transport through band-to-band tunneling at semiconductor p-n junctions
DC.creator	Oki, K.
	Ueda, S.
	Usami, T.
	Fujii, S.
	Kikuoka, S.
	Yamamoto, K.
	Sawano, K.
	Hamaya, K.
DC.publisher	American Physical Society
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-05-22
DC.identifier	https://doi.org/10.1103/physrevapplied.23.l051005
DC.description	Oki K., Ueda S., Usami T., et al. Room-temperature spin transport through band-to-band tunneling at semiconductor p-n junctions. Physical Review Applied 23, L051005 (2025); https://doi.org/10.1103/physrevapplied.23.l051005.
DCTERMS.abstract	We report electrical spin injection, transport, and detection at room temperature through band-to-band tunneling (BTBT) at semiconductor p-n junctions. Using germanium-based lateral spin-valve devices with p-n-junction electrodes, we experimentally observe pure spin-current transport through BTBT at room temperature. Asymmetric bias-current dependence of the spin signals is evidently found, which originates from the spin injection via BTBT through p-n junctions or the spin extraction via localized states near p-n junctions. Notably, even for the use of a thin p-type semiconductor layer at the spin injector and detector, we find clear spin-transport properties at room temperature. This study will open a path for the room-temperature operation of a spin-based tunnel field-effect transistor with a p-n junction.
DC.rights	Copyright 2025 by the American Physical Society
DC.format	101981
citation_title	Room-temperature spin transport through band-to-band tunneling at semiconductor p-n junctions
citation_author	Oki, K.
	Ueda, S.
	Usami, T.
	Fujii, S.
	Kikuoka, S.
	Yamamoto, K.
	Sawano, K.
	Hamaya, K.
citation_publisher	American Physical Society
citation_language	English
citation_date	2025-05-22
citation_journal_title	Physical Review Applied
citation_volume	23
citation_issue	5
citation_firstpage	L051005
citation_doi	https://doi.org/10.1103/physrevapplied.23.l051005
citation_public_url	https://hdl.handle.net/11094/101981

Room-temperature spin transport through band-to-band tunneling at semiconductor p-n junctions

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