Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si

Watahiki, Shimon; Kusumoto, Shuhei; Yamada, Astuya; Obinata, Sora; Yamada, Shinya; Kikuoka, Shuya; Yamada, Michihiro; Sawano, Kentarou; Hamaya, Kohei

doi:https://doi.org/10.1016/j.mssp.2025.109809

Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si

Watahiki, Shimon; Kusumoto, Shuhei; Yamada, Astuya et al.

Materials Science in Semiconductor Processing, 2025, 199, 109809

Number of Access:73（2025-08-14 04:52 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/102338

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Title	Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si
Creator	CreatorName Watahiki, Shimon
	CreatorName Kusumoto, Shuhei
	CreatorName Yamada, Astuya
	ORCID 0000-0003-1025-0022 0000-0003-1025-0022 researchmap permalink s_obinata s_obinata CreatorName Obinata, Sora
	NRID 1000030725049 1000030725049 ORCID 0000-0001-6340-9151 0000-0001-6340-9151 researchmap permalink shinyayamada shinyayamada Scopus Author ID 56140528400 56140528400 CreatorName Yamada, Shinya
	CreatorName Kikuoka, Shuya
	NRID 1000050778529 1000050778529 CreatorName Yamada, Michihiro
	NRID 1000090409376 1000090409376 CreatorName Sawano, Kentarou
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 CreatorName Hamaya, Kohei
Subject	Ge
	Sn
	Co-based Heusler compounds
	Spintronics
	Vertical spin-valve devices
Description	Watahiki Shimon, Kusumoto Shuhei, Yamada Astuya, et al. Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si. Materials Science in Semiconductor Processing 199, 109809 (2025); https://doi.org/10.1016/j.mssp.2025.109809.
Abstract	Using low-temperature growth techniques and an intermediate Ge layer with Sn doping, we experimentally demonstrate an epitaxial Co2Fe(Al,Si)/Ge/Co2FeSi heterostructure on a Si platform, where Co2Fe(Al,Si) and Co2FeSi are Heusler compounds that exhibit half-metallic properties. The Sn doping only at the initial growth stage of Ge effectively affects the suppression of surface segregation of Sn and the atomic interdiffusion at the Ge/Co2FeSi heterointerface. By fabricating current-perpendicular-to-the-plane spin-valve devices, we observe a magnetoresistance (MR) effect with an MR ratio of 0.11 % at room temperature, showing evidence of a nonvolatile memory effect at room temperature, even in a vertical semiconductor spintronic device structure with Co-based Heusler compounds. This study presents crucial findings for high-performance Ge-based vertical spin-valve devices on a Si platform.
Publisher	Elsevier BV
Source Title	Materials Science in Semiconductor Processing
Volume (Issue)	199
Page	109809
Date of Issued	2025-07-19
Language	English
Handle URL	https://hdl.handle.net/11094/102338
PISSN	13698001
eISSN	18734081
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1016/j.mssp.2025.109809
Access Rights	open access
CopyRight	This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Materials Science in Semiconductor Processing. 2025, 199, p. 109809
DC.title	Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si
DC.creator	Watahiki, Shimon
	Kusumoto, Shuhei
	Yamada, Astuya
	Obinata, Sora
	Yamada, Shinya
	Kikuoka, Shuya
	Yamada, Michihiro
	Sawano, Kentarou
	Hamaya, Kohei
DC.publisher	Elsevier BV
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-07-19
DC.identifier	https://doi.org/10.1016/j.mssp.2025.109809
DC.subject	Ge
	Sn
	Co-based Heusler compounds
	Spintronics
	Vertical spin-valve devices
DC.description	Watahiki Shimon, Kusumoto Shuhei, Yamada Astuya, et al. Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si. Materials Science in Semiconductor Processing 199, 109809 (2025); https://doi.org/10.1016/j.mssp.2025.109809.
DCTERMS.abstract	Using low-temperature growth techniques and an intermediate Ge layer with Sn doping, we experimentally demonstrate an epitaxial Co2Fe(Al,Si)/Ge/Co2FeSi heterostructure on a Si platform, where Co2Fe(Al,Si) and Co2FeSi are Heusler compounds that exhibit half-metallic properties. The Sn doping only at the initial growth stage of Ge effectively affects the suppression of surface segregation of Sn and the atomic interdiffusion at the Ge/Co2FeSi heterointerface. By fabricating current-perpendicular-to-the-plane spin-valve devices, we observe a magnetoresistance (MR) effect with an MR ratio of 0.11 % at room temperature, showing evidence of a nonvolatile memory effect at room temperature, even in a vertical semiconductor spintronic device structure with Co-based Heusler compounds. This study presents crucial findings for high-performance Ge-based vertical spin-valve devices on a Si platform.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	102338
citation_title	Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si
citation_author	Watahiki, Shimon
	Kusumoto, Shuhei
	Yamada, Astuya
	Obinata, Sora
	Yamada, Shinya
	Kikuoka, Shuya
	Yamada, Michihiro
	Sawano, Kentarou
	Hamaya, Kohei
citation_publisher	Elsevier BV
citation_language	English
citation_date	2025-07-19
citation_journal_title	Materials Science in Semiconductor Processing
citation_volume	199
citation_firstpage	109809
citation_doi	https://doi.org/10.1016/j.mssp.2025.109809
citation_public_url	https://hdl.handle.net/11094/102338

Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si

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