Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing

Hara, Masahiro; Tomigahara, Kazuki; Nozaki, Mikito; Kobayashi, Takuma; Watanabe, Heiji

doi:https://doi.org/10.1063/5.0292841

Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing

Hara, Masahiro; Tomigahara, Kazuki; Nozaki, Mikito et al.

Applied Physics Letters, 2025, 127(16), 074011

Number of Access:27（2025-12-01 03:40 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/102884

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Title	Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing
Creator	NRID 1000031004418 1000031004418 ORCID 0000-0001-9748-8011 0000-0001-9748-8011 researchmap permalink masahirohara masahirohara Scopus Author ID 7403348802 7403348802 CreatorName Hara, Masahiro
	CreatorName Tomigahara, Kazuki
	NRID 1000090646217 1000090646217 ORCID 0009-0008-2368-1036 0009-0008-2368-1036 researchmap permalink n0z n0z CreatorName Nozaki, Mikito
	NRID 1000020827711 1000020827711 ORCID 0000-0002-2755-5079 0000-0002-2755-5079 researchmap permalink takumakobayashi takumakobayashi Scopus Author ID 57203742549 57203742549 CreatorName Kobayashi, Takuma
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
Subject	MOS devices
	Semiconductor device defects
	Dielectric materials
	Energy dispersive X-ray spectroscopy
	Annealing
	Transmission electron microscopy
	Chemical vapor deposition
	Interfacial properties
Description	Hara Masahiro, Tomigahara Kazuki, Nozaki Mikito, et al. Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing. Applied Physics Letters 127, 074011 (2025); https://doi.org/10.1063/5.0292841.
Abstract	The impact of annealing pressure on hole traps in SiO₂/p-type GaN metal-oxide-semiconductor (MOS) structures was investigated. The density of fast-response interface hole traps (Nₕᵤₘₚ) was characterized from a hump in capacitance–voltage (C–V) characteristics of the MOS capacitors. Nₕᵤₘₚ was below 2×10¹²cm⁻² and was almost unchanged at 200–800℃ when annealed under 100 MPa, while atmospheric-pressure annealing at a higher temperature led to a higher Nₕᵤₘₚ, exceeding 1×10¹³cm⁻² at 800℃. When samples first annealed at 800℃ under atmospheric pressure were additionally annealed under 100 MPa, Nₕᵤₘₚ was reduced to about 2×10¹²cm⁻² regardless of the temperature of high-pressure annealing. Consequently, high-pressure oxygen annealing turned out to not only suppress the generation of interface hole traps but also reduce the traps once generated in GaN MOS structures.
Publisher	AIP Publishing
Source Title	Applied Physics Letters
Volume (Issue)	127(16)
Page	074011
Date of Issued	2025-10-24
Language	English
Handle URL	https://hdl.handle.net/11094/102884
PISSN	00036951
eISSN	10773118
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1063/5.0292841
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Hara Masahiro, Tomigahara Kazuki, Nozaki Mikito, et al. Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing. Applied Physics Letters 127, 074011 (2025); https://doi.org/10.1063/5.0292841.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2025, 127(16), p. 074011
DC.title	Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing
DC.creator	Hara, Masahiro
	Tomigahara, Kazuki
	Nozaki, Mikito
	Kobayashi, Takuma
	Watanabe, Heiji
DC.publisher	AIP Publishing
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-10-24
DC.identifier	https://doi.org/10.1063/5.0292841
DC.subject	MOS devices
	Semiconductor device defects
	Dielectric materials
	Energy dispersive X-ray spectroscopy
	Annealing
	Transmission electron microscopy
	Chemical vapor deposition
	Interfacial properties
DC.description	Hara Masahiro, Tomigahara Kazuki, Nozaki Mikito, et al. Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing. Applied Physics Letters 127, 074011 (2025); https://doi.org/10.1063/5.0292841.
DCTERMS.abstract	The impact of annealing pressure on hole traps in SiO₂/p-type GaN metal-oxide-semiconductor (MOS) structures was investigated. The density of fast-response interface hole traps (Nₕᵤₘₚ) was characterized from a hump in capacitance–voltage (C–V) characteristics of the MOS capacitors. Nₕᵤₘₚ was below 2×10¹²cm⁻² and was almost unchanged at 200–800℃ when annealed under 100 MPa, while atmospheric-pressure annealing at a higher temperature led to a higher Nₕᵤₘₚ, exceeding 1×10¹³cm⁻² at 800℃. When samples first annealed at 800℃ under atmospheric pressure were additionally annealed under 100 MPa, Nₕᵤₘₚ was reduced to about 2×10¹²cm⁻² regardless of the temperature of high-pressure annealing. Consequently, high-pressure oxygen annealing turned out to not only suppress the generation of interface hole traps but also reduce the traps once generated in GaN MOS structures.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Hara Masahiro, Tomigahara Kazuki, Nozaki Mikito, et al. Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing. Applied Physics Letters 127, 074011 (2025); https://doi.org/10.1063/5.0292841.
DC.format	102884
citation_title	Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing
citation_author	Hara, Masahiro
	Tomigahara, Kazuki
	Nozaki, Mikito
	Kobayashi, Takuma
	Watanabe, Heiji
citation_publisher	AIP Publishing
citation_language	English
citation_date	2025-10-24
citation_journal_title	Applied Physics Letters
citation_volume	127
citation_issue	16
citation_firstpage	074011
citation_doi	https://doi.org/10.1063/5.0292841
citation_public_url	https://hdl.handle.net/11094/102884

Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing

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