A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance

Nakamura, Mitsuo; Shima, Hideki; Matsuoka, Toshimasa et al.

IEICE Transactions on Electronics, 2002, E85-C(7), 1428-1435

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Identifier to cite or link to this item: https://hdl.handle.net/11094/51673

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Title
A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance
Creator
CreatorName
Nakamura, Mitsuo
CreatorName
Shima, Hideki
NRID
1000080324820 1000080324820
ORCID
0000-0003-3876-2679 0000-0003-3876-2679
researchmap permalink
read0068628 read0068628
Scopus Author ID
7402741552 7402741552
CreatorName
Matsuoka, Toshimasa
NRID
1000020192180 1000020192180
CreatorName
Taniguchi, Kenji
Subject
voltage controlled oscillator
wireless communication
CMOS
SOI
double-tuning
Abstract
For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.
Publisher
電子情報通信学会
The Institute of Electronics, Information and Communication Engineers
デンシ　ジョウホウ　ツウシン　ガッカイ
Source Title
IEICE Transactions on Electronics
Volume (Issue)
E85-C(7)
Page
1428-1435
Date of Issued
2002-07
Language
English
Handle URL
https://hdl.handle.net/11094/51673
PISSN
09168516
NCID
AA10826261
Relation.references
URI
https://search.ieice.org/
Access Rights
open access
CopyRight
copyright©2002 IEICE
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article