Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides

Matsuoka, Toshimasa; Taguchi, Shigenari; Taniguchi, Kenji et al.

IEICE Transactions on Electronics, 1995, E78-C(3), 248-254

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Identifier to cite or link to this item: https://hdl.handle.net/11094/51686

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Title
Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides
Creator
NRID
1000080324820 1000080324820
ORCID
0000-0003-3876-2679 0000-0003-3876-2679
researchmap permalink
read0068628 read0068628
Scopus Author ID
7402741552 7402741552
CreatorName
Matsuoka, Toshimasa
CreatorName
Taguchi, Shigenari
NRID
1000020192180 1000020192180
CreatorName
Taniguchi, Kenji
NRID
1000040029004 1000040029004
CreatorName
Hamaguchi, Chihiro
CreatorName
Kakimoto, Seizou
CreatorName
Takagi, Junkou
Subject
N_2O-oxynitridation
charge-to-breakdown
thin dielectrics
MOS structure
dielectric reliability
Abstract
Thickness dependence of breakdown properties in control and N_2O-Oxynitrided oxides was investigated. Nitrogen atoms piled up at the Si/SiO_2 interface increase charge-to-breakdown (QBD) under substrate injection conditions for oxide thickness below 10 nm, while no meaningful improvement is observed above 10 nm. This thickness dependence is explained by the fact that N_2O-oxynitridation reduces oxide defects near the Si/SiO_2 interface. N_2O-oxynitridation of the oxides reduces the number of neutral electron traps due to the chemical reaction of oxide defect with nitrogen atoms. Electron trapping of N_2O-oxynitrided oxides is significantly suppressed; the reduction of electron trapping events into neutral electron traps increases QBD under substrate injection. On the other hand, under gate injection, N_2O-oxynitrided oxides show low rate of hole trapping during the initial stress period. However, in heavily injected condition, electron trapping is not suppressed, resulting in little improvement of QBD. In addition, the control and N_2O-oxynitrided oxides show quite similar dependence of QBD on stress current density, which is related primarily to the carrier transport phenomena (tunneling, traveling, impact ionization and hole injection).
Publisher
電子情報通信学会
The Institute of Electronics, Information and Communication Engineers
デンシ　ジョウホウ　ツウシン　ガッカイ
Source Title
IEICE Transactions on Electronics
Volume (Issue)
E78-C(3)
Page
248-254
Date of Issued
1995-03
Language
English
Handle URL
https://hdl.handle.net/11094/51686
PISSN
09168516
NCID
AA10826261
Relation.references
URI
https://search.ieice.org/
Access Rights
open access
CopyRight
copyright©1995 IEICE
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article