Drain Current Response Delay of FD-SOI MOSFETs in RF Operation

Shimizu, Yoshiyuki; Kim, Gue Chol; Murakami, Bunsei; Ueda, Keisuke; Utsurogi, Yoshihiro; Cha, Sungwoo; Matsuoka, Toshimasa; Taniguchi, Kenji

doi:https://doi.org/10.1587/elex.1.518

Drain Current Response Delay of FD-SOI MOSFETs in RF Operation

Shimizu, Yoshiyuki; Kim, Gue Chol; Murakami, Bunsei et al.

IEICE Electronics Express, 2004, 1(16), 518-522

Number of Access:1,189（2025-08-14 05:02 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/51695

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Title	Drain Current Response Delay of FD-SOI MOSFETs in RF Operation
Creator	CreatorName Shimizu, Yoshiyuki
	CreatorName Kim, Gue Chol
	CreatorName Murakami, Bunsei
	CreatorName Ueda, Keisuke
	CreatorName Utsurogi, Yoshihiro
	CreatorName Cha, Sungwoo
	NRID 1000080324820 1000080324820 ORCID 0000-0003-3876-2679 0000-0003-3876-2679 researchmap permalink read0068628 read0068628 Scopus Author ID 7402741552 7402741552 CreatorName Matsuoka, Toshimasa
	NRID 1000020192180 1000020192180 CreatorName Taniguchi, Kenji
Subject	FD-SOI
	MOSFET
	RF
	modeling
	drain current response delay
Abstract	We investigated the frequency dependences of Y22 of FD-SOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET's RF behavior can be well reproduced with the proposed model including the drain current response delay.
Publisher	電子情報通信学会
	The Institute of Electronics, Information and Communication Engineers
	デンシ　ジョウホウ　ツウシン　ガッカイ
Source Title	IEICE Electronics Express
Volume (Issue)	1(16)
Page	518-522
Date of Issued	2004-11
Language	English
Handle URL	https://hdl.handle.net/11094/51695
eISSN	13492543
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1587/elex.1.518
Access Rights	open access
CopyRight	copyright©2004 IEICE
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	IEICE Electronics Express. 2004, 1(16), p. 518-522
DC.title	Drain Current Response Delay of FD-SOI MOSFETs in RF Operation
DC.creator	Shimizu, Yoshiyuki
	Kim, Gue Chol
	Murakami, Bunsei
	Ueda, Keisuke
	Utsurogi, Yoshihiro
	Cha, Sungwoo
	Matsuoka, Toshimasa
	Taniguchi, Kenji
DC.publisher	電子情報通信学会
	The Institute of Electronics, Information and Communication Engineers
	デンシ　ジョウホウ　ツウシン　ガッカイ
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2004-11
DC.identifier	https://doi.org/10.1587/elex.1.518
DC.subject	FD-SOI
	MOSFET
	RF
	modeling
	drain current response delay
DCTERMS.abstract	We investigated the frequency dependences of Y22 of FD-SOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET's RF behavior can be well reproduced with the proposed model including the drain current response delay.
DC.rights	copyright©2004 IEICE
DC.format	51695
citation_title	Drain Current Response Delay of FD-SOI MOSFETs in RF Operation
citation_author	Shimizu, Yoshiyuki
	Kim, Gue Chol
	Murakami, Bunsei
	Ueda, Keisuke
	Utsurogi, Yoshihiro
	Cha, Sungwoo
	Matsuoka, Toshimasa
	Taniguchi, Kenji
citation_publisher	電子情報通信学会
citation_language	English
citation_date	2004-11
citation_journal_title	IEICE Electronics Express
citation_volume	1
citation_issue	16
citation_firstpage	518
citation_lastpage	522
citation_doi	https://doi.org/10.1587/elex.1.518
citation_public_url	https://hdl.handle.net/11094/51695

Drain Current Response Delay of FD-SOI MOSFETs in RF Operation

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