Accurate Small-Signal Modeling of FD-SOI MOSFETs

Kim, Guechol; Shimizu, Yoshiyuki; Murakami, Bunsei et al.

IEICE Transactions on Electronics, 2006, E89-C(4), 517-519

Number of Access:1,191（2025-08-14 06:16 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/51706

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Title
Accurate Small-Signal Modeling of FD-SOI MOSFETs
Creator
CreatorName
Kim, Guechol
CreatorName
Shimizu, Yoshiyuki
CreatorName
Murakami, Bunsei
CreatorName
Goto, Masaru
CreatorName
Ueda, Keisuke
CreatorName
Kihara, Takao
NRID
1000080324820 1000080324820
ORCID
0000-0003-3876-2679 0000-0003-3876-2679
researchmap permalink
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Scopus Author ID
7402741552 7402741552
CreatorName
Matsuoka, Toshimasa
NRID
1000020192180 1000020192180
CreatorName
Taniguchi, Kenji
Subject
FD-SOI
MOSFET
RF
modeling
non-quasi-static
Abstract
A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz.
Publisher
電子情報通信学会
The Institute of Electronics, Information and Communication Engineers
デンシ　ジョウホウ　ツウシン　ガッカイ
Source Title
IEICE Transactions on Electronics
Volume (Issue)
E89-C(4)
Page
517-519
Date of Issued
2006-04
Language
English
Handle URL
https://hdl.handle.net/11094/51706
PISSN
09168516
eISSN
17451353
NCID
AA10826261
Relation.references
URI
https://search.ieice.org/
Access Rights
open access
CopyRight
copyright©2006 IEICE
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article